Datasheet > K8S1115EZC-DE1ET

K8S1115EZC-DE1ET

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
83页	1511K
描述
EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,

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K8S1115EZC-DE1ET 数据手册

Rev. 1.1

K8S1215E(T/B/Z)C

datasheet NOR FLASH MEMORY

512M Bit (32M x16) Muxed Burst / Multi Bank SLC NOR Flash Memory

1.0 FEATURES

2.0 GENERAL DESCRIPTION

• Single Voltage, 1.7V to 1.95V for Read and Write operations

• Organization

The K8S(10/11/12/13)15E featuring single 1.8V power supply is a 512Mbit

Muxed Burst Multi Bank Flash Memory organized as 32Mx16. The memory

architecture of the device is designed to divide its memory arrays into

512blocks(Uniform block part)/515 blocks (Boot block part) with indepen-

dent hardware protection. This block architecture provides highly flexible

erase and program capability. The K8S(10/11/12/13)15E NOR Flash con-

sists of sixteen banks. This device is capable of reading data from one bank

while programming or erasing in the other bank. Regarding read access

time, the K8S10/1215E provides an 11ns burst access time and an 95ns

initial access time at 66MHz. At 83MHz, the K8S10/1215E provides an 9ns

burst access time and an 95ns initial access time. At 108MHz, the K8S11/

1315E provides an 7ns burst access time and an 95ns initial access time.

At 133MHz, the K8S11/1315E provides an 6ns burst access time and an

95ns initial access time. The device performs a program operation in units

of 16 bits (Word) and erases in units of a block. Single or multiple blocks

can be erased. The block erase operation is completed within typically

0.6sec. The device requires 25mA as program/erase current in the

extended temperature ranges.

- 33,554,432 x 16 bit (Word Mode Only)

• Multiplexed Data and Address for reduction of interconnections

- A/DQ0 ~ A/DQ15

• Read While Program/Erase Operation

• Multiple Bank Architecture

- 16 Banks (32Mb Partition)

• OTP Block : Extra 512-Word block

• Read Access Time (@ CL=30pF)

- Asynchronous Random Access Time : 100ns

- Synchronous Random Access Time : 95ns

- Burst Access Time :

11ns (66MHz) / 9ns (83MHz) / 7ns (108MHz) /6ns (133MHz)

• Burst Length :

- Continuous Linear Burst

- Linear Burst : 8-word & 16-word with Wrap

• Block Architecture

- Uniform block part (K8S(10/11/12/13)15EZC) :

Five hundred twelve 64Kword blocks

- Boot block part (K8S(10/11/12/13)15ET(B)C) :

Four 16Kword blocks and five hundred eleven 64Kword blocks (Bank 0

contains four 16 Kword blocks and thirty-one 64Kword blocks, Bank 1 ~

Bank 15 contain four hundred eighty 64Kword blocks)

The K8S(10/11/12/13)15E NOR Flash Memory is created by using Sam-

sung's advanced CMOS process technology.

3.0 PIN DESCRIPTION

• Reduce program time using the VPP

• Support 512-word Buffer Program

Pin Name

Pin Function

• Power Consumption (Typical value, CL=30pF)

- Synchronous Read Current : 35mA at 133MHz

- Program/Erase Current : 25mA

- Read While Program/Erase Current : 45mA

- Standby Mode/Auto Sleep Mode : 30uA

• Block Protection/Unprotection

A16 - A24

Address Inputs

A/DQ0 - A/DQ15

Multiplexed Address/Data input/output

Chip Enable

Output Enable

- Using the software command sequence

- Last two boot blocks are protected by WP=VIL

(Boot block part : K8S(10/11/12/13)15ET(B)C)

- Last one block (BA511) is protected by WP=VIL

(Uniform block part : K8S(10/11/12/13)15EZC)

- All blocks are protected by VPP=VIL

• Handshaking Feature

- Provides host system with minimum latency by monitoring RDY

• Erase Suspend/Resume

• Program Suspend/Resume

• Unlock Bypass Program/Erase

RESET

VPP

Hardware Reset

Accelerates Programming

Write Enable

Hardware Write Protection Input

Clock

CLK

RDY

AVD

DPD

Vcc

Ready Output

Address Valid Input

Deep Power Down

Power Supply

• Blank Check Feature

• Hardware Reset (RESET)

• Deep Power Down Mode

• Data Polling and Toggle Bits

VSS

Ground

- Provides a software method of detecting the status of program

or erase completion

• Endurance

- 100K Program/Erase cycles

• Extended Temperature : -25°C ~ 85°C

• Support Common Flash Memory Interface

• Low Vcc Write Inhibit

• Output Driver Control by Configuration Register

• Package : 64Ball FBGA type (9mm x 11mm), 0.5mm ball pitch

1.0mm(Max.)Thickness

- 5 -

1 2 3 456 7 8...83

中文翻译

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与K8S1115EZC-DE1ET相关器件

型号	品牌	描述	获取价格	数据表
K8S1115EZC-DE1F0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1115EZC-FC1D0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-64	获取价格
K8S1115EZC-FC1ET	SAMSUNG	EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,	获取价格
K8S1115EZC-FC1FT	SAMSUNG	EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,	获取价格
K8S1115EZC-FE1F0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-64	获取价格
K8S1115EZC-SC1E0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1115EZC-SC1F0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1115EZC-SE1C0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1115EZC-SE1D0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1115EZC-SE1E0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1115EZC-SE1F0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1115EZC-SE1FT	SAMSUNG	EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,	获取价格
K8S1215EBC-DC1D0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1215EBC-DC1E0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1215EBC-DE1C0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1215EBC-DE1CT	SAMSUNG	EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,	获取价格
K8S1215EBC-DE1D0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1215EBC-DE1DT	SAMSUNG	EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,	获取价格
K8S1215EBC-DE1E0	SAMSUNG	Flash, 32MX16, 100ns, PBGA64, 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64	获取价格
K8S1215EBC-FC1DT	SAMSUNG	EEPROM Card, 32MX16, 95ns, Parallel, CMOS, PBGA64,	获取价格

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