Datasheet > K7A801800A-HC16T

K7A801800A-HC16T

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
20页	536K
描述
Standard SRAM, 512KX18, 3.5ns, CMOS, PBGA119

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数据手册

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K7A801800A-HC16T 数据手册

K7A803600A

K7A801800A

256Kx36 & 512Kx18 Synchronous SRAM

119BGA PACKAGE PIN CONFIGURATIONS(TOP VIEW)

K7A801800A(512Kx18)

ADSP

ADSC

VDD

VDDQ

CS2

DQb

VDD

DQb

DQPb

VSS

WEb

VSS

LBO

VSS

WEa

VSS

DQPa

DQa

VDD

DQa

CS1

DQa

VDDQ

DQa

VDDQ

ADV

VDD

CLK

DQb

VDDQ

DQa

DQb

VDDQ

DQb

A1*

VDDQ

A0*

DQa

VDD

VDDQ

Note : * A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.

PIN NAME

SYMBOL

PIN NAME

SYMBOL

PIN NAME

Power Supply(+3.3V)

A0,A1

Address Inputs

VDD

VSS

Burst Count Address

Ground

ADV

Burst Address Advance

Address Status Processor

Address Status Controller

Clock

N.C.

No Connect

ADSP

ADSC

CLK

DQa

DQb

DQPa~Pb

Data Inputs/Outputs

Data Inputs/Outpus

CS1

Chip Select

CS2

Chip Select

WEx

(x=a,b)

Byte Write Inputs

VDDQ

Output Power Supply

(2.5V or 3.3V)

Output Enable

Global Write Enable

Byte Write Enable

Power Down Input

Burst Mode Control

LBO

- 6 -

July 2000

Rev 1.0

1...3 4 567 8 9...20

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