Datasheet > K7A403600M-T22T

K7A403600M-T22T

更新时间： 2024-11-16 09:35:11

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
15页	407K
描述
Cache SRAM, 128KX36, 2.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

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K7A403600M-T22T 数据手册

K7A403600M

128Kx36 Synchronous SRAM

Document Title

128Kx36-Bit Synchronous Pipelined Burst SRAM

Revision History

Remark

Rev. No

History

Draft Date

Preliminary

0.0

0.1

Initial draft

April . 14. 1998

April . 20. 1998

Change Undershoot spec

from -3.0V(pulse width£20ns) to -2.0V(pulse width£tCYC/2)

Add Overshoot spec 4.6V(pulse width£tCYC/2)

Change VIH max from 5.5V to VDD+0.5V

Preliminary

0.2

Change tCD from 3.2ns to 3.1ns at bin -50.

Change tOE from 3.2ns to 3.1ns at bin -50.

Change setup from 1.5ns to 1.4ns at bin -50.

Change tCYC from 5.5ns to 5.4ns at bin -55.

May . 23. 1998

May . 25. 1998

0.3

Change tCD from 3.5ns to 3.1ns at bin -55.

Change tOE from 3.5ns to 3.1ns at bin -55.

Change setup from 1.5ns to 1.4ns at bin -55.

Preliminary

0.4

Add tCYC 175Mhz.

Change ISB2 from 20mA to 30mA.

May . 30. 1998

June. 08. 1998

0.5

Modify DC characteristics( Input Leakage Current test Conditions)

form VDD=VSS to VDD to Max.

Final

Fianl

1.0

2.0

3.0

4.0

Final Release.

June. 15 . 1998

July. 10 . 1998

Dec. 02. 1998

Mar. 04. 1999

Add tCYC 225Mhz.

Add VDDQ Supply voltage( 2.5V )

Change tCD , tOE from 3.1ns to 2.8ns at bin -44.

Change tHZC max , tHZOE max from 3.0ns to 2.8ns at bin -44.

Final

5.0

6.0

7.0

Add tCYC 250Mhz.

April. 10. 1999

May. 03. 1999

May. 10. 1999

Change tAH, tSH, tDH, tWH, tADVH, tCSH from 0.5ns to 0.4ns at bin -40.

1. Change tAS, tSS, tDS, tWS, tADVS, tCSS from 1.4ns to 1.2ns at bin -44.

2. Change tAH, tSH, tDH, tWH, tADVH, tCSH from 0.5ns to 0.4ns at bin -44.

3. Change tAS, tSS, tDS, tWS, tADVS, tCSS from 1.2ns to 0.8ns at bin -40.

4. Change tAH, tSH, tDH, tWH, tADVH, tCSH from 0.4ns to 0.3ns at bin -40.

Final

8.0

9.0

1. Change ISB value from 120mA to 130mA at -57

Remove 119BGA(7x17 Ball Grid Array Package) .

June. 24. 1999

Nov. 26. 1999

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

November 1999

Rev 9.0

12 3 4 5 6 7...15

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与K7A403600M-T22T相关器件

型号	品牌	获取价格	描述	数据表
K7A403601A-QC150	SAMSUNG	获取价格	Cache SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A403601B	SAMSUNG	获取价格	128Kx36/x32 & 256Kx18 Synchronous SRAM
K7A403601B-QC	SAMSUNG	获取价格	128Kx36/x32 & 256Kx18 Synchronous SRAM
K7A403601B-QC14	SAMSUNG	获取价格	Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A403601B-QC16	SAMSUNG	获取价格	Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A403601B-QI16	SAMSUNG	获取价格	Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A403609A	SAMSUNG	获取价格	128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
K7A403609A-QC18	SAMSUNG	获取价格	Standard SRAM, 128KX36, 3ns, CMOS, PQFP100
K7A403609A-QC180	SAMSUNG	获取价格	Cache SRAM, 128KX36, 3ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7A403609A-QC20	SAMSUNG	获取价格	Standard SRAM, 128KX36, 2.8ns, CMOS, PQFP100

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