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K7A323600M-FC200 PDF预览

K7A323600M-FC200

更新时间: 2024-09-25 13:43:39
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
28页 353K
描述
Cache SRAM, 1MX36, 3.1ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

K7A323600M-FC200 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:LBGA,针数:165
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:3.1 ns
其他特性:PIPELINED ARCHITECTUREJESD-30 代码:R-PBGA-B165
长度:17 mm内存密度:37748736 bit
内存集成电路类型:CACHE SRAM内存宽度:36
功能数量:1端子数量:165
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX36
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
宽度:15 mmBase Number Matches:1

K7A323600M-FC200 数据手册

 浏览型号K7A323600M-FC200的Datasheet PDF文件第2页浏览型号K7A323600M-FC200的Datasheet PDF文件第3页浏览型号K7A323600M-FC200的Datasheet PDF文件第4页浏览型号K7A323600M-FC200的Datasheet PDF文件第5页浏览型号K7A323600M-FC200的Datasheet PDF文件第6页浏览型号K7A323600M-FC200的Datasheet PDF文件第7页 
K7A323600M  
K7A321800M  
1Mx36 & 2Mx18 Synchronous SRAM  
Document Title  
1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
1. Initial draft  
May. 10. 2001  
Aug. 29. 2001  
Dec. 31. 2001  
Advance  
1. Add 165FBGA package  
Preliminary  
Preliminary  
1. Update JTAG scan order  
2. Speed bin merge.  
From K7A3236(18)09M to K7A3236(18)00M.  
3. AC parameter change.  
tOH(min)/tHZC(min) from 0.8 to 1.5 at -25  
tOH(min)/tHZC(min) from 1.0 to 1.5 at -22  
tOH(min)/tHZC(min) from 1.0 to 1.5 at -20  
0.3  
0.4  
1. Change pin out for 165FBGA  
- x18/x36 ; 11B => from A to NC  
Feb. 14. 2002  
Apr. 20. 2002  
Preliminary  
Preliminary  
, 2R ==> from NC to A .  
1. Insert pin at JTAG scan order of 165FBGA in connection with pin out change  
- x18/x36 ; insert Pin ID of 2R to BIT number of 69  
0.5  
1.0  
1.1  
1.2  
1. Add Icc, Isb,Isb1 and Isb2 values  
1. Correct the pin name of 100TQFP.  
1. Add the Industrial temperature range.  
1. Change the Stand-by current (Isb)  
May.10. 2002  
Oct. 15. 2002  
Mar. 19, 2003  
Oct. 17, 2003  
Preliminary  
Final  
Final  
Final  
Before  
Isb - 25 : 120  
After  
170  
160  
150  
140  
140  
140  
110  
100  
- 22 : 110  
- 20 : 100  
- 16 :  
- 15 :  
- 14 :  
90  
90  
90  
Isb1  
Isb2  
:
:
90  
80  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
Oct. 2003  
Rev 1.2  

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