Datasheet > K6F4008U1D-YF700

K6F4008U1D-YF700

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
8页	106K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32

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K6F4008U1D-YF700 数据手册

K6F4008U1D Family

CMOS SRAM

Document Title

512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

Draft Date

Remark

0.0

1.0

Initial draft

March 16, 2000

Preliminary

Finalized

April 24, 2000

Final

- Change for tWHZ: 25 to 20ns for 70ns product

- Change for tDW: 20 to 25ns for 55ns product

25 to 30ns for 70ns product

1.01

Errata correction

October 25, 2001

Final

- Removed T’ TL Compatible’from Features

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.01

October 2001

- 1 -

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
K6F4008U1D-YF70T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
K6F4008U2C-FF55	SAMSUNG	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PBGA48, 6.50 X 8.50 MM, 0.75 MM PITCH, FBGA-48
K6F4008U2C-FF55T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PBGA36
K6F4008U2C-FF70T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PBGA36
K6F4008U2E	SAMSUNG	获取价格	512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-EF55	SAMSUNG	获取价格	512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-EF55T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 7 MM, 0.75 MM PITCH, TBGA-48/36
K6F4008U2E-EF70	SAMSUNG	获取价格	512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-EF70T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PBGA36, 6 X 7 MM, 0.75 MM PITCH, TBGA-48/36
K6F4008U2E-F	SAMSUNG	获取价格	512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM