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K6F4016R4E-EF85 PDF预览

K6F4016R4E-EF85

更新时间: 2024-09-23 21:55:15
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器
页数 文件大小 规格书
9页 121K
描述
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F4016R4E-EF85 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA48,6X8,30
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.9Is Samacsys:N
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:7 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8/2 V认证状态:Not Qualified
座面最大高度:1 mm最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.015 mA
最大供电电压 (Vsup):2.2 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm
Base Number Matches:1

K6F4016R4E-EF85 数据手册

 浏览型号K6F4016R4E-EF85的Datasheet PDF文件第2页浏览型号K6F4016R4E-EF85的Datasheet PDF文件第3页浏览型号K6F4016R4E-EF85的Datasheet PDF文件第4页浏览型号K6F4016R4E-EF85的Datasheet PDF文件第5页浏览型号K6F4016R4E-EF85的Datasheet PDF文件第6页浏览型号K6F4016R4E-EF85的Datasheet PDF文件第7页 
K6F4016R4E Family  
CMOS SRAM  
Document Title  
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
Initial draft  
Finalize  
November 10, 2000 Preliminary  
March 12, 2001  
Final  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
March 2001  
- 1 -  

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