Datasheet > K6F4008U2C-FF55

K6F4008U2C-FF55

更新时间： 2024-09-25 03:59:55

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
9页	145K
描述
Standard SRAM, 512KX8, 55ns, CMOS, PBGA48, 6.50 X 8.50 MM, 0.75 MM PITCH, FBGA-48

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K6F4008U2C-FF55 数据手册

K6F4008U2C Family

CMOS SRAM

Document Title

512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

Draft Date

Remark

0.0

1.0

Initial Draft

July 28, 1999

Preliminary

Finalize

March 22, 2000

Final

- Adopt new code.

- Improve VIN, VOUT max. on ¢ABSOLUTE MAXIMUM RATINGS¢ from

3.6V to VCC+0.5V.

2.0

Change for AC parameter

April 24, 2000

Final

- Change for tWHZ: 25 to 20ns for 70ns product

- Change for tDW: 20 to 25ns for 55ns product

25 to 30ns for 70ns product

- Errata correction

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 2.0

April 2000

- 1 -

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
K6F4008U2C-FF55T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PBGA36
K6F4008U2C-FF70T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PBGA36
K6F4008U2E	SAMSUNG	获取价格	512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-EF55	SAMSUNG	获取价格	512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-EF55T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 7 MM, 0.75 MM PITCH, TBGA-48/36
K6F4008U2E-EF70	SAMSUNG	获取价格	512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-EF70T	SAMSUNG	获取价格	Standard SRAM, 512KX8, 70ns, CMOS, PBGA36, 6 X 7 MM, 0.75 MM PITCH, TBGA-48/36
K6F4008U2E-F	SAMSUNG	获取价格	512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2G	SAMSUNG	获取价格	512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2G-EF55	SAMSUNG	获取价格	SRAM