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K6E0808V1C-JC17 PDF预览

K6E0808V1C-JC17

更新时间: 2024-09-24 10:28:59
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 180K
描述
Standard SRAM, 32KX8, 17ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

K6E0808V1C-JC17 数据手册

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PRELIMINARY  
CMOS SRAM  
K6E0808V1C-C  
Document Title  
32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Preliminary  
Final  
Initial release with Preliminary.  
Jun. 1st, 1994  
Oct. 4th, 1994  
Release to final Data Sheet.  
1. Delete Preliminary  
Rev. 2.0  
Rev. 3.0  
2.1. Add 28-TSOP1 Package.  
Feb. 22th, 1996  
Feb. 25th, 1998  
Final  
Final  
3.1. Delete DIP Package.  
3.2. Delete 20ns part  
3.3. Add Capacitive load of the test environment in A.C test load  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 3.0  
February 1998  
- 1 -  

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