Datasheet > K4S64323LH-FC60

K4S64323LH-FC60

更新时间： 2024-11-28 22:14:23

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	142K
描述
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4S64323LH-FC60 数据手册

K4S64323LH - F(H)E/N/G/C/L/F

Mobile-SDRAM

512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 2.5V power supply.

The K4S64323LH is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA with 0.8mm ball pitch

( -FXXX : Leaded, -HXXX : Lead Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S64323LH-F(H)E/N/G/C/L/F60

K4S64323LH-F(H)E/N/G/C/L/F75

K4S64323LH-F(H)E/N/G/C/L/F1H

K4S64323LH-F(H)E/N/G/C/L/F1L

166MHz(CL=3)

133MHz(CL=3)

105MHz(CL=2)

90 FBGA

Leaded (Lead Free)

LVCMOS

105MHz(CL=3)^*1

- F(H)E/N/G : Normal/Low/Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)C/L/F : Normal/Low/Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

February 2004

12 3 4 5 6 7...12

中文翻译

下载PDF

与K4S64323LH-FC60相关器件

型号	品牌	获取价格	描述	数据表
K4S64323LH-FC75	SAMSUNG	获取价格	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FC750	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90
K4S64323LH-FE1H	SAMSUNG	获取价格	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FE1L	SAMSUNG	获取价格	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FE1L0	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90
K4S64323LH-FE60	SAMSUNG	获取价格	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FE75	SAMSUNG	获取价格	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FE750	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90, FBGA-90
K4S64323LH-FF1H	SAMSUNG	获取价格	512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S64323LH-FF1H0	SAMSUNG	获取价格	Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, FBGA-90

与K4S64323LH-FC60相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

K4S64323LH-FC60

K4S64323LH-FC60 数据手册

与K4S64323LH-FC60相关器件

与K4S64323LH-FC60相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4S64323LH-FC60

K4S64323LH-FC60 数据手册

与K4S64323LH-FC60相关器件

与K4S64323LH-FC60相关文章

您还可以找

您在本页遇到什么问题？