Datasheet > K4S51163PF-Y

K4S51163PF-Y

更新时间： 2024-11-17 22:47:47

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器手机
页数	文件大小	规格书
12页	114K
描述
8M x 16Bit x 4 Banks Mobile-SDRAM

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中文翻译

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K4S51163PF-Y 数据手册

K4S51163PF-Y(P)F

Mobile-SDRAM

8M x 16Bit x 4 Banks Mobile-SDRAM

FEATURES

GENERAL DESCRIPTION

• 1.8V power supply.

The K4S51163PF is 536,870,912 bits synchronous high data

rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system formance memory system applications.

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• 1 /CS Support.

• 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4S51163PF-Y(P)F75

K4S51163PF-Y(P)F90

K4S51163PF-Y(P)F1L

133MHz(CL=3),83MHz(CL=2)

111MHz(CL=3),83MHz(CL=2)

111MHz(CL=3)*1,66MHz(CL=2)

54 FBGA Pb

(Pb Free)

LVCMOS

- F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific

purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

Address configuration

Organization

Bank

Row

Column Address

32M x16

BA0,BA1

A0 - A12

A0 - A9

September 2004

12 3 4 5 6 7...12

中文翻译

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与K4S51163PF-Y相关器件

型号	品牌	获取价格	描述	数据表
K4S51163PF-YF	SAMSUNG	获取价格	8M x 16Bit x 4 Banks Mobile-SDRAM
K4S513233C-ML1L	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90
K4S513233C-ML80	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, FBGA-90
K4S513233C-MN1H	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90
K4S513233F	SAMSUNG	获取价格	Mobile SDRAM
K4S513233F-EC1H0	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4S513233F-EC1L	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90
K4S513233F-EC1L0	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4S513233F-EC75	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90
K4S513233F-EF1H	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90

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