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K4S28323LE-SC1H0 PDF预览

K4S28323LE-SC1H0

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器
页数 文件大小 规格书
10页 77K
描述
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90

K4S28323LE-SC1H0 数据手册

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K4S28323LE-S(D)E/N/S/C/L/R  
Mobile-SDRAM  
1M x 32Bit x 4 Banks SDRAM in 90FBGA  
FEATURES  
GENERAL DESCRIPTION  
The K4S28323LE is 134,217,728 bits synchronous high data  
rate Dynamic RAM organized as 4 x 1,048,576 words by 32  
bits, fabricated with SAMSUNG¢s high performance CMOS  
technology. Synchronous design allows precise cycle control  
with the use of system clock and I/O transactions are possible  
on every clock cycle. Range of operating frequencies, program-  
mable burst lengths and programmable latencies allow the  
same device to be useful for a variety of high bandwidth and  
high performance memory system applications.  
• 2.5V power supply  
• LVCMOS compatible with multiplexed address  
• Four banks operation  
• MRS cycle with address key programs  
- CAS latency (1, 2 & 3)  
- Burst length (1, 2, 4, 8 & Full page)  
- Burst type (Sequential & Interleave)  
• Special Function Support  
- Internal TCSR(Temperature Compensated Self Refresh)  
- PASR(Partial Array Self Refresh)  
All inputs are sampled at the positive going edge of the system  
clock  
ORDERING INFORMATION  
Part No.  
Max Freq.  
Interface Package  
• Burst read single-bit write operation  
• DQM for masking.  
K4S28323LE-S(D)E/N/S/C/L/R60 166MHz(CL=3)  
133MHz(CL=3)  
K4S28323LE-S(D)E/N/S/C/L/R75  
105MHz(CL=2)  
90FBGA  
• Auto & self refresh  
LVCMOS  
Pb  
• 64ms refresh period (4K cycle).  
K4S28323LE-S(D)E/N/S/C/L/R1H 105MHz(CL=2)  
(Pb Free)  
• Extended Temperature Operation (-25°C ~ 85°C).  
• Commercial Temperature Operation (-25°C ~ 70°C).  
• 90Balls Monolithic FBGA(11mm x 13mm)  
• Pb for -SXXX, Pb Free for -DXXX.  
*1  
K4S28323LE-S(D)E/N/S/C/L/R1L  
105MHz(CL=3)  
- S(D)E/N/S : Normal/Low/Super Low Power, Extended Temp.  
- S(D)C/L/R : Normal/Low/Super Low Power, Commercial Temp.  
Note :  
1. In case of 40MHz Frequency, CL1 can be supported.  
FUNCTIONAL BLOCK DIAGRAM  
LWE  
Data Input Register  
LDQM  
Bank Select  
1M x 32  
1M x 32  
1M x 32  
1M x 32  
DQi  
CLK  
ADD  
Column Decoder  
Latency & Burst Length  
LCKE  
Programming Register  
LWCBR  
LRAS  
LCBR  
LWE  
LCAS  
LDQM  
Timing Register  
CLK  
CKE  
CS  
RAS  
CAS  
WE  
DQM  
* Samsung Electronics reserves the right to change products or specification without notice.  
May. 2003  

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