Datasheet > K4M64163LK-BL1L

K4M64163LK-BL1L

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	113K
描述
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54

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K4M64163LK-BL1L 数据手册

K4M64163LK - R(B)N/G/L/F

Mobile-SDRAM

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

-1.0 ~ 3.6

-55 ~ +150

1.0

Unit

Voltage on any pin relative to Vss

Voltage on VDD supply relative to Vss

Storage temperature

IN, VOUT

DD, VDDQ

STG

°C

Power dissipation

Short circuit current

NOTES:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, T = -25 to 85°C for Extended, -25 to 70°C for Commercial)

Parameter

Symbol

Min

2.3

Typ

Max

Unit

Note

2.5

2.7

Supply voltage

2.3

2.5

2.7

DDQ

Input logic high voltage

Input logic low voltage

Output logic high voltage

Output logic low voltage

Input leakage current

NOTES :

0.8 x VDDQ

-0.3

DDQ + 0.3

0.3

DDQ -0.2

OH = -0.1mA

0.2

OL = 0.1mA

-2

1. Under all conditions VDDQ must be less than or equal to VDD.

2. VIH (max) = 3.0V AC.The overshoot voltage duration is ≤ 3ns.

3. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.

4. Any input 0V ≤ VIN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.

5. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.

CAPACITANCE ^(VDD = 2.5V, T = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)

Symbol

Min

1.5

2.0

Max

3.5

3.0

4.5

Unit

Note

Clock

CLK

RAS, CAS, WE, CS, CKE, DQM

Address

ADD

OUT

DQ0 ~ DQ15

January 2006

1 2 345 6 7...12

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