Datasheet > K4M64163LK-BG1L0

K4M64163LK-BG1L0

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	113K
描述
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54

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K4M64163LK-BG1L0 数据手册

K4M64163LK - R(B)N/G/L/F

Mobile-SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, T

= -25 to 85°C for Extended, -25 to 70°C for Commercial)

Version

Parameter

Symbol

Test Condition

Unit Note

-75

-1H

-1L

Burst length = 1

Operating Current

(One Bank Active)

CC1

RC ≥ tRC(min)

= 0 mA

CC2

CKE ≤ VIL(max), tCC = 10ns

0.5

Precharge Standby Current in

power-down mode

CC2PS CKE & CLK ≤ VIL(max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

CC2

Input signals are changed one time during 20ns

Precharge Standby Current

in non power-down mode

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

CC2NS

CC3

CKE ≤ VIL(max), tCC = 10ns

Active Standby Current

in power-down mode

CC3PS CKE & CLK ≤ VIL(max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

CC3

Active Standby Current

in non power-down mode

(One Bank Active)

Input signals are changed one time during 20ns

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

CC3NS

IO = 0 mA

Operating Current

(Burst Mode)

Page burst

4Banks Activated

CCD = 2CLKs

Refresh Current

RC ≥ tRC(min)

115

110

300

100

°C

-N/L

45 ^*5

85/70

Internal TCSR

Full Array

Self Refresh Current

CKE ≤ 0.2V

180

140

120

300

220

180

-G/F

1/2 of Full Array

1/4 of Full Array

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Internal TCSR can be supported.

In commercial Temp : Max 45°C/Max 70°C, In extended Temp : Max 45°C/Max 85°C

4. K4M64163LK-R(B)G/F**

5. It has +/-5 °C tolerance.

6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

January 2006

1 2 3 456 7 8...12

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