Datasheet > K4M563233G-HG7LT

K4M563233G-HG7LT

更新时间： 2024-02-18 22:14:43

品牌	Logo	应用领域
三星 - SAMSUNG		时钟动态存储器内存集成电路
页数	文件大小	规格书
12页	143K
描述
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90

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中文翻译

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技术参数
数据手册

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K4M563233G-HG7LT 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	FBGA, BGA90,9X15,32
Reach Compliance Code：	unknown	风险等级：	5.84
最长访问时间：	5.4 ns	最大时钟频率 (fCLK)：	133 MHz
I/O 类型：	COMMON	交错的突发长度：	1,2,4,8
JESD-30 代码：	R-PBGA-B90	JESD-609代码：	e3
内存密度：	268435456 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	32	湿度敏感等级：	1
端子数量：	90	字数：	8388608 words
字数代码：	8000000	最高工作温度：	85 °C
最低工作温度：	-25 °C	组织：	8MX32
封装主体材料：	PLASTIC/EPOXY	封装代码：	FBGA
封装等效代码：	BGA90,9X15,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, FINE PITCH	峰值回流温度（摄氏度）：	225
电源：	3/3.3 V	认证状态：	Not Qualified
刷新周期：	4096	连续突发长度：	1,2,4,8,FP
最大待机电流：	0.001 A	子类别：	DRAMs
最大压摆率：	0.16 mA	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子面层：	MATTE TIN	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

K4M563233G-HG7LT 数据手册

K4M563233G - F(H)N/G/L/F

Mobile-SDRAM

2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4M563233G is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

•

DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M563233G-F(H)N/G/L/F60

166MHz(CL=3)

90 FBGA Pb

(Pb Free)

LVCMOS

K4M563233G-F(H)N/G/L/F75

K4M563233G-F(H)N/G/L/F7L^*1

133MHz(CL=3), 111MHz(CL=2)

133MHz(CL=3), 83MHz(CL=2)

- F(H)N/G : Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

Address configuration

Organization

Bank

Row

Column Address

8Mx32

BA0,BA1

A0 - A11

A0 - A8

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-

VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could

result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-

visions may apply.

February 2006

12 3 4 5 6 7...12

中文翻译

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与K4M563233G-HG7LT相关器件

型号	品牌	获取价格	描述	数据表
K4M563233G-HN60	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90
K4M563233G-HN600	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4M563233G-HN750	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4M56323LD-EN1L	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90
K4M56323LD-ES80	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90
K4M56323LD-MUP1L	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90
K4M56323LE	SAMSUNG	获取价格	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EC1H	SAMSUNG	获取价格	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EC1L	SAMSUNG	获取价格	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M56323LE-EC1L0	SAMSUNG	获取价格	Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90

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