是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | LFBGA, BGA90,9X15,32 |
针数: | 90 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.24 |
风险等级: | 5.83 | Is Samacsys: | N |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 7 ns |
其他特性: | AUTO/SELF REFRESH | 最大时钟频率 (fCLK): | 105 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | R-PBGA-B90 | 长度: | 13 mm |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 32 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 90 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | -25 °C |
组织: | 8MX32 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFBGA | 封装等效代码: | BGA90,9X15,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | 260 | 电源: | 1.8/2.5,2.5 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
座面最大高度: | 1.4 mm | 自我刷新: | YES |
连续突发长度: | 1,2,4,8,FP | 最大待机电流: | 0.0012 A |
子类别: | DRAMs | 最大压摆率: | 0.27 mA |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 11 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4M56323LE-EC1L | SAMSUNG |
获取价格 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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K4M56323LE-EC1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 |
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K4M56323LE-EC80 | SAMSUNG |
获取价格 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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K4M56323LE-EC800 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 |
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K4M56323LE-EE1H | SAMSUNG |
获取价格 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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K4M56323LE-EE1L | SAMSUNG |
获取价格 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
![]() |
K4M56323LE-EE1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 |
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K4M56323LE-EE80 | SAMSUNG |
获取价格 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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K4M56323LE-EE800 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90 |
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K4M56323LE-EL1H | SAMSUNG |
获取价格 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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