是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TSOP2 |
包装说明: | TSOP2, | 针数: | 66 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.24 | 风险等级: | 5.27 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 0.65 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PDSO-G66 |
长度: | 22.22 mm | 内存密度: | 268435456 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 16 |
湿度敏感等级: | 2 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 66 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 16MX16 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.5 V |
标称供电电压 (Vsup): | 2.6 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4H561638F-UCCC | SAMSUNG |
获取价格 |
256Mb F-die DDR400 SDRAM Specification |
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K4H561638F-UCCC0 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, |
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K4H561638F-ULA2 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, CMOS, PDSO66, |
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K4H561638F-ULA20 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, |
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K4H561638F-ULAA | SAMSUNG |
获取价格 |
暂无描述 |
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K4H561638F-ULB30 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, |
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K4H561638F-ULCC | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, CMOS, PDSO66, |
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K4H561638F-ULCC0 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, |
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K4H561638F-ZCA20 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 |
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K4H561638F-ZCB00 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 |
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