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K4F640412D-JL45 PDF预览

K4F640412D-JL45

更新时间: 2024-02-02 17:23:58
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
20页 367K
描述
Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

K4F640412D-JL45 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:0.400 INCH, PLASTIC, SOJ-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.92Is Samacsys:N
访问模式:FAST PAGE最长访问时间:45 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-J32JESD-609代码:e0
长度:20.96 mm内存密度:67108864 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:32字数:16777216 words
字数代码:16000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:3.76 mm
自我刷新:YES最大待机电流:0.0002 A
子类别:DRAMs最大压摆率:0.12 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

K4F640412D-JL45 数据手册

 浏览型号K4F640412D-JL45的Datasheet PDF文件第1页浏览型号K4F640412D-JL45的Datasheet PDF文件第2页浏览型号K4F640412D-JL45的Datasheet PDF文件第3页浏览型号K4F640412D-JL45的Datasheet PDF文件第5页浏览型号K4F640412D-JL45的Datasheet PDF文件第6页浏览型号K4F640412D-JL45的Datasheet PDF文件第7页 
K4F660412D,K4F640412D  
CMOS DRAM  
DC AND OPERATING CHARACTERISTICS (Continued)  
Max  
Symbol  
Power  
Speed  
Units  
K4F660412D  
K4F640412D  
-45  
-50  
-60  
90  
80  
70  
120  
110  
100  
mA  
mA  
mA  
ICC1  
ICC2  
ICC3  
Don¢t care  
Normal  
L
1
1
1
1
mA  
mA  
Don¢t care  
-45  
-50  
-60  
90  
80  
70  
120  
110  
100  
mA  
mA  
mA  
Don¢t care  
Don¢t care  
-45  
-50  
-60  
70  
60  
50  
70  
60  
50  
mA  
mA  
mA  
ICC4  
ICC5  
ICC6  
Normal  
L
0.5  
200  
0.5  
200  
mA  
uA  
Don¢t care  
-45  
-50  
-60  
120  
110  
100  
120  
110  
100  
mA  
mA  
mA  
Don¢t care  
ICC7  
ICCS  
L
L
Don¢t care  
Don¢t care  
350  
350  
350  
350  
uA  
uA  
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)  
ICC2 : Standby Current (RAS=CAS=W=VIH)  
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)  
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)  
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)  
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)  
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode  
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V,  
W, OE=VIH, Address=Don¢t care, DQ=Open, TRC=31.25us  
ICCS : Self Refresh Current  
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open  
*Note :  
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.  
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,  
address can be changed maximum once within one fast page mode cycle time, tPC.  

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