Datasheet > K4F640412B-TC45

K4F640412B-TC45

更新时间： 2023-01-03 06:43:36

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
20页	369K
描述
Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

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K4F640412B-TC45 数据手册

K4F660412B,K4F640412B

CMOS DRAM

DC AND OPERATING CHARACTERISTICS (Continued)

Max

Symbol

Power

Speed

Units

K4F660412B

K4F640412B

-45

-50

-60

100

130

120

110

ICC1

Don¢t care

Normal

ICC2

ICC3

Don¢t care

-45

-50

-60

100

130

120

110

Don¢t care

-45

-50

-60

ICC4

ICC5

ICC6

Normal

500

300

500

300

Don¢t care

-45

-50

-60

100

130

120

110

Don¢t care

ICC7

ICCS

Don¢t care

400

ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)

ICC2 : Standby Current (RAS=CAS=W=VIH)

ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)

ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)

ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)

ICC7 : Battery back-up current, Average power supply current, Battery back-up mode

Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V,

W, OE=VIH, Address=Don¢t care DQ=Open, TRC=31.25us

ICCS : Self Refresh Current

RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open

*Note :

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one fast page mode cycle time, tPC.

1 2 345 6 7...20

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