K4F171611D, K4F151611D
K4F171612D, K4F151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power
consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
1Mx16 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
• Fast Page Mode operation
• Part Identification
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
- K4F171611D-J(T) (5V, 4K Ref.)
- K4F151611D-J(T) (5V, 1K Ref.)
- K4F171612D-J(T) (3.3V, 4K Ref.)
- K4F151612D-J(T) (3.3V, 1K Ref.)
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Active Power Dissipation
Unit : mW
5V
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II)
3.3V
400mil packages
• Single +5V±10% power supply (5V product)
Speed
4K
324
288
1K
4K
1K
770
715
• Single +3.3V±0.3V power supply (3.3V product)
-50
-60
504
468
495
440
FUNCTIONAL BLOCK DIAGRAM
• Refresh Cycles
Part
NO.
Refresh
cycle
Refresh period
Normal L-ver
VCC
RAS
UCAS
LCAS
W
Vcc
Vss
Control
Clocks
VBB Generator
K4F171611D
5V
4K
1K
64ms
128ms
16ms
Lower
K4F171612D 3.3V
K4F151611D 5V
Data in
DQ0
to
Refresh Timer
Refresh Control
Row Decoder
Buffer
DQ7
K4F151612D 3.3V
Lower
Data out
Buffer
Memory Array
1,048,576 x16
Cells
OE
Refresh Counter
Row Address Buffer
Col. Address Buffer
Upper
Data in
Buffer
• Perfomance Range
A0-A11
(A0 - A9)*1
A0 - A7
DQ8
to
DQ15
Speed
-50
Remark
35ns 5V/3.3V
tRAC
50ns
60ns
tCAC
tRC
tPC
Upper
Data out
Buffer
15ns
90ns
Column Decoder
(A0 - A9)*1
-60
15ns 110ns 40ns 5V/3.3V
Note) *1 : 1K Refresh
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.