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K4E640812D-JP450 PDF预览

K4E640812D-JP450

更新时间: 2024-01-29 06:59:28
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器
页数 文件大小 规格书
21页 194K
描述
DRAM

K4E640812D-JP450 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.75
Base Number Matches:1

K4E640812D-JP450 数据手册

 浏览型号K4E640812D-JP450的Datasheet PDF文件第4页浏览型号K4E640812D-JP450的Datasheet PDF文件第5页浏览型号K4E640812D-JP450的Datasheet PDF文件第6页浏览型号K4E640812D-JP450的Datasheet PDF文件第8页浏览型号K4E640812D-JP450的Datasheet PDF文件第9页浏览型号K4E640812D-JP450的Datasheet PDF文件第10页 
Industrial Temperature  
K4E660812D,K4E640812D  
CMOS DRAM  
( Note 11 )  
TEST MODE CYCLE  
-45  
-50  
-60  
Parameter  
Symbol  
Units  
Note  
Min  
79  
Max  
Min  
89  
Max  
Min  
109  
145  
Max  
Random read or write cycle time  
Read-modify-write cycle time  
Access time from RAS  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tRC  
110  
121  
tRWC  
tRAC  
tCAC  
tAA  
50  
17  
55  
18  
65  
20  
3,4,10,12  
3,4,5,12  
3,10,12  
Access time from CAS  
Access time from column address  
RAS pulse width  
28  
30  
35  
50  
12  
18  
39  
28  
29  
62  
40  
22  
52  
50  
10K  
10K  
55  
13  
18  
43  
30  
35  
72  
47  
25  
53  
55  
10K  
10K  
65  
15  
20  
50  
35  
39  
84  
54  
30  
61  
65  
10K  
10K  
tRAS  
tCAS  
tRSH  
tCSH  
tRAL  
tCWD  
tRWD  
tAWD  
tHPC  
tHPRWC  
tRASP  
tCPA  
tOEA  
tOED  
tOEH  
CAS pulse width  
RAS hold time  
CAS hold time  
Column Address to RAS lead time  
CAS to W delay time  
7
7
RAS to W delay time  
Column Address to W delay time  
Hyper Page cycle time  
Hyper Page read-modify-write cycle time  
RAS pulse width (Hyper page cycle)  
Access time from CAS precharge  
OE access time  
7
14  
14  
200K  
29  
200K  
33  
200K  
40  
3
3
17  
18  
20  
OE to data delay  
13  
13  
18  
18  
20  
20  
OE command hold time  

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