K3N6C1000C-GC
CMOS MASK ROM
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
FEATURES
GENERAL DESCRIPTION
· Switchable organization
4,194,304x8(byte mode)
2,097,152x16(word mode)
· Fast access time : 100ns(Max.)
· Supply voltage : single +5V
· Current consumption
Operating : 50mA(Max.)
Standby : 50mA(Max.)
· Fully static operation
The K3N6C1000C-GC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 4,194,304x8 bit(byte mode) or as
2,097,152x16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
· All inputs and outputs TTL compatible
· Three state outputs
· Package
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
-. K3N6C1000C-GC : 44-SOP-600
The K3N6C1000C-GC is packaged in a 44-SOP.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
A20
X
MEMORY CELL
MATRIX
BUFFERS
AND
.
.
.
.
.
.
.
.
N.C
A18
A20
1
2
44
43
42
41
(2,097,152x16/
4,194,304x8)
A19
A8
DECODER
A17
A7
3
4
A9
A6
A5
A4
A3
40 A10
5
A11
39
Y
6
SENSE AMP.
BUFFERS
A12
7
38
37
36
35
34
33
32
31
30
BUFFERS
AND
8
A13
A14
A15
A2
A1
9
DECODER
A0
10
11
12
13
14
15
16
17
18
A-1
A0
A16
SOP
BHE
VSS
CE
VSS
OE
Q0
.
.
.
Q15/A-1
Q7
CE
Q0/Q8
Q7/Q15
CONTROL
LOGIC
Q8
29 Q14
28 Q6
OE
Q1
BHE
Q9
Q13
Q5
27
26
25
24
23
Q2 19
Q10 20
Q12
Q4
Q3
21
22
Pin Name
A0 - A20
Pin Function
Address Inputs
Data Outputs
Q11
VCC
Q0 - Q14
K3N6C1000C-GC
Output 15(Word mode)/
LSB Address(Byte mode)
Q15 /A-1
BHE
CE
Word/Byte selection
Chip Enable
OE
Output Enable
Power (+5V)
Ground
VCC
VSS
N.C
No Connection