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JS28F256P33BFA PDF预览

JS28F256P33BFA

更新时间: 2024-01-18 18:35:33
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镁光 - MICRON PC
页数 文件大小 规格书
132页 1301K
描述
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semiconductor die, wafers, packages, and PCBs.

JS28F256P33BFA 数据手册

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Micron Confidential and Proprietary  
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory  
Features  
List of Figures  
Figure 1: Marketing Part Number Chart ............................................................................................................ 2  
Figure 2: 48-Pin TSOP – Type 1 (Top View) ........................................................................................................ 9  
Figure 3: 63-Ball VFBGA, x8 (Balls Down, Top View) ........................................................................................ 10  
Figure 4: 63-Ball VFBGA, x16 (Balls Down, Top View) ...................................................................................... 11  
Figure 5: 48-Pin TSOP – Type 1, CPL ............................................................................................................... 12  
Figure 6: 63-Ball VFBGA (10.5mm x 13mm) .................................................................................................... 13  
Figure 7: 63-Ball VFBGA (9mm x 11mm) ......................................................................................................... 14  
Figure 8: NAND Flash Die (LUN) Functional Block Diagram ............................................................................ 15  
Figure 9: Array Organization – MT29F4G08 (x8) .............................................................................................. 16  
Figure 10: Array Organization – MT29F4G16 (x16) .......................................................................................... 17  
Figure 11: Array Organization – MT29F8G08 and MT29F16G08 (x8) ................................................................. 18  
Figure 12: Array Organization – MT29F8G16 (x16) .......................................................................................... 19  
Figure 13: Asynchronous Command Latch Cycle ............................................................................................ 21  
Figure 14: Asynchronous Address Latch Cycle ................................................................................................ 22  
Figure 15: Asynchronous Data Input Cycles .................................................................................................... 23  
Figure 16: Asynchronous Data Output Cycles ................................................................................................. 24  
Figure 17: Asynchronous Data Output Cycles (EDO Mode) ............................................................................. 25  
Figure 18: READ/BUSY# Open Drain .............................................................................................................. 26  
Figure 19: tFall and tRise (3.3V VCC) ................................................................................................................ 27  
Figure 20: tFall and tRise (1.8V VCC) ................................................................................................................ 27  
Figure 21: IOL vs. Rp (VCC = 3.3V VCC) .............................................................................................................. 28  
Figure 22: IOL vs. Rp (1.8V VCC) ....................................................................................................................... 28  
Figure 23: TC vs. Rp ....................................................................................................................................... 29  
Figure 24: R/B# Power-On Behavior ............................................................................................................... 30  
Figure 25: RESET (FFh) Operation .................................................................................................................. 34  
Figure 26: READ ID (90h) with 00h Address Operation .................................................................................... 35  
Figure 27: READ ID (90h) with 20h Address Operation .................................................................................... 35  
Figure 28: READ PARAMETER (ECh) Operation .............................................................................................. 39  
Figure 29: READ UNIQUE ID (EDh) Operation ............................................................................................... 48  
Figure 30: SET FEATURES (EFh) Operation .................................................................................................... 50  
Figure 31: GET FEATURES (EEh) Operation .................................................................................................... 51  
Figure 32: READ STATUS (70h) Operation ...................................................................................................... 55  
Figure 33: READ STATUS ENHANCED (78h) Operation ................................................................................... 56  
Figure 34: RANDOM DATA READ (05h-E0h) Operation ................................................................................... 57  
Figure 35: RANDOM DATA READ TWO-PLANE (06h-E0h) Operation .............................................................. 58  
Figure 36: RANDOM DATA INPUT (85h) Operation ........................................................................................ 59  
Figure 37: PROGRAM FOR INTERNAL DATA INPUT (85h) Operation .............................................................. 61  
Figure 38: READ PAGE (00h-30h) Operation ................................................................................................... 65  
Figure 39: READ PAGE (00h-30h) Operation with Internal ECC Enabled .......................................................... 65  
Figure 40: READ PAGE CACHE SEQUENTIAL (31h) Operation ......................................................................... 66  
Figure 41: READ PAGE CACHE RANDOM (00h-31h) Operation ....................................................................... 67  
Figure 42: READ PAGE CACHE LAST (3Fh) Operation ..................................................................................... 68  
Figure 43: READ PAGE TWO-PLANE (00h-00h-30h) Operation ........................................................................ 70  
Figure 44: PROGRAM PAGE (80h-10h) Operation ............................................................................................ 72  
Figure 45: PROGRAM PAGE CACHE (80h–15h) Operation (Start) ..................................................................... 74  
Figure 46: PROGRAM PAGE CACHE (80h–15h) Operation (End) ...................................................................... 74  
Figure 47: PROGRAM PAGE TWO-PLANE (80h–11h) Operation ....................................................................... 76  
Figure 48: ERASE BLOCK (60h-D0h) Operation .............................................................................................. 77  
Figure 49: ERASE BLOCK TWO-PLANE (60h–D1h) Operation .......................................................................... 78  
Figure 50: READ FOR INTERNAL DATA MOVE (00h-35h) Operation ................................................................ 80  
PDF: 09005aef83b25735  
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
6
© 2009 Micron Technology, Inc. All rights reserved.  

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