JMTQ240N03D
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
ID = 250µA, VGS = 0V
V(BR)DSS Drain-Source Breakdown Voltage
30
-
-
-
-
-
V
VDS = 30V, VGS = 0V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
1.0
µA
nA
V
DS = 0V, VGS = ±20V
-
±100
On Characteristics
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5A
VGS = 4.5V, ID = 3A
VGS(th) Gate Threshold Voltage
1.2
1.7
2.2
V
-
-
16.6
23.1
21.6
30.0
mΩ
mΩ
Static Drain-Source ON-Resistance(4)
RDS(ON)
Dynamic Characteristics
Ciss
Coss
Crss
Qg
Input Capacitance
-
-
-
-
-
-
485
69
53
10
2
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
VGS = 0V, VDS = 15V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VGS = 0 to 10V
Qgs
Qgd
Gate Source Charge
Gate Drain("Miller") Charge
VDD = 15V, ID = 5A
2
Switching Characteristics
td(on) Turn-On DelayTime
-
-
-
-
4
11
14
2
-
-
-
-
ns
ns
ns
ns
tr
td(off) Turn-Off DelayTime
tf Turn-Off Fall Time
Turn-On Rise Time
V
GS = 10V, VDD = 15V
ID= 5A, RGEN = 3Ω
Drain-Source Diode Characteristics and Max Ratings
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
12
48
1.2
-
A
A
ISM
VSD
trr
VGS = 0V, IS = 12A
Drain to Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
-
V
7.5
2
ns
nC
IF=5A,di/dt=100A/μs
Qrr
-
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
2. EAS condition: Starting TJ=25C, VDD=15V, VG=10V, RG=25ohm, L=0.5mH, IAS=7A
3. RθJA is measured with the device mounted on a 1inch2 pad of 2oz copper FR4 PCB
4. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%.
JieJie Microelectronics Co., Ltd
2
Version:1.2