Datasheet > JCT620E

JCT620E

更新时间： 2023-12-06 19:46:45

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
10页	1128K
描述
标准型单向可控硅

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JCT620E 数据手册

JCT620E

JieJie Microelectronics Co., Ltd.

FIG.1 Maximum power dissipation versus

FIG.2: RMS on-state current versus case

RMS on-state current

temperature

I_T(RMS)(A)

P(W)

88℃

100

125

I_T(RMS)(A)

T_C(℃)

FIG.3: RMS on-state current versus ambient

temperature (printed circuit board FR4,copper

thickness:35μm)(full cycle)

FIG.4: Surge peak on-state current versus

number of cycles

I_TSM(A)

I_T(RMS)(A)

300

2.5

T_c=25℃,t_p=10ms,one cycle,half-sine

250

200

150

100

1.5

0.5

100

125

1.E+0

1.E+1

1.E+2

1.E+3

1.E+4

1.E+5

T_a(℃)

Number of cycles

FIG.5: On-state characteristics

FIG.6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

t_p<10ms, and corresponding value of I²t

(dI/dt<150A/μs)

SHNCDJDFKVFKPJDFGPSDJFPAJFJOFJOJ

SOPGJOPRJGJOSDHSDHHHSEHUISHFSUI

I_TSM(A), I²t(A²s)

I_TM(A)

100

Tj=25℃ typ

Tj=25℃ max

Tj=125℃ typ

I_TSM

1000

dI/dt

I²t

100

0.5

1.5

2.5

0.01

0.1

t_p(ms)

V_TM(V)

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http://www.jjwdz.com

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