Datasheet > JCT810C

JCT810C

更新时间： 2024-11-24 14:54:35

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
8页	1027K
描述
标准型单向可控硅

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JCT810C 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd.

JCT810C

10A SCR

Rev.A.1.0

DESCRIPTION:

With high ability to withstand the shock loading of

large current, JCT810C of silicon controlled rectifiers

provides high dV/dt rate with strong resistance to

electromagnetic interference.It is especially

recommended for use on solid state relay,

motorcycle, power charger, T-tools etc.

Package TO-220C is RoHS compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

800

≤10

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

800

Unit

℃

Storage junction temperature range

Operating junction temperature range

T_j

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤106℃)

RMS on-state current (T_C≤106℃)

V_DRM

V_RRM

I_T(AV)

I_T(RMS)

800

6.5

Non repetitive surge peak on-state current

(t_p=10ms, T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms, T_j=25℃)

110

I_TSM

120

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

A/μs

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

I_GM

100

Peak gate current (t_p=20μs , T_j=125℃)

TEL：+86-513-68528666

http://www.jjwdz.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与JCT810C相关器件

型号	品牌	获取价格	描述	数据表
JCT810F	JJM	获取价格	10A SCRs
JCT810F	JJM	获取价格	标准型单向可控硅
JCT810H	JJM	获取价格	10A SCRs
JCT810H	JJM	获取价格	标准型单向可控硅
JCT810K	JJM	获取价格	标准型单向可控硅
JCT812A	JJM	获取价格	标准型单向可控硅
JCT812C	JJM	获取价格	标准型单向可控硅
JCT812E	JJM	获取价格	标准型单向可控硅
JCT812F	JJM	获取价格	标准型单向可控硅
JCT812H	JJM	获取价格	标准型单向可控硅