Datasheet > JCT640E

JCT640E

更新时间： 2024-11-08 14:52:59

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
10页	1122K
描述
标准型单向可控硅

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数据手册

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JCT640E 数据手册

JIEJIE MICROELECTRONICS CO., LTD.

JCT640E

40A SCR

Rev.A.1.0

DESCRIPTION:

With high ability to withstand the shock loading of

large current, JCT640E SCR provides high dV/dt

rate with strong resistance to electromagnetic

interference. It is especially recommended for use

on solid state relay, motorcycle, power charger,

T-tools etc. Package TO-263 is RoHS compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

600

≤35

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

600

Unit

℃

Storage junction temperature range

Operating junction temperature range

T_j

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤82℃)

RMS on-state current (T_C≤82℃)

V_DRM

V_RRM

I_T(AV)

I_T(RMS)

600

Non repetitive surge peak on-state current

(t_p=10ms, T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms, T_j=25℃)

500

I_TSM

540

1250

150

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

A/μs

Peak gate current (t_p=20μs , T_j=125℃)

I_GM

Average gate power dissipation (T_j=125℃)

P_G(AV)

TEL：+86-513-68528666

http://www.jjwdz.com

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