JIEJIE MICROELECTRONICS CO., LTD.
JCT151H-650R
12A SCR
Rev.A.1.0
DESCRIPTION:
With high ability to withstand the shock loading of
large current, JCT151H-650R of silicon controlled
rectifiers provides high dV/dt rate with strong
resistance to electromagnetic interference. It is
especially recommended for use on solid state
relay, motorcycle, power charger, T-tools etc.
Package TO-251 is RoHS compliant.
MAIN FEATURES
Symbol
IT(RMS)
Value
12
Unit
A
VDRM/VRRM
IGT
650
≤15
V
mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
-40-150
-40-125
650
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
Tj
Repetitive peak off-state voltage (Tj=25℃)
Repetitive peak reverse voltage (Tj=25℃)
Average on-state current (TC≤49℃)
RMS on-state current (TC≤49℃)
VDRM
VRRM
IT(AV)
IT(RMS)
650
V
7.5
A
12
A
Non repetitive surge peak on-state current
(tp=10ms, Tj=25℃)
Non repetitive surge peak on-state current
(tp=8.3ms, Tj=25℃)
120
ITSM
A
132
72
I2t value for fusing (tp=10ms , Tj=25℃)
I2t
A2s
A/μs
A
Critical rate of rise of on-state current
(IG=2×IGT, f=100Hz , Tj=125℃)
dI/dt
IGM
100
4
Peak gate current (tp=20μs , Tj=125℃)
TEL:+86-513-68528666
http://www.jjwdz.com
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