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JANTXV1N6634DUS PDF预览

JANTXV1N6634DUS

更新时间： 2024-11-25 21:13:51
品牌 Logo 应用领域
CDI-DIODE 测试二极管
页数 文件大小 规格书
26页 186K
描述
Zener Diode, 3.9V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2

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JANTXV1N6634DUS 技术参数

生命周期：Obsolete包装说明：HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code：unknown风险等级：5.74
Is Samacsys：N外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODEJESD-30 代码：O-LELF-R2
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
参考标准：MIL-19500/356H标称参考电压：3.9 V
表面贴装：YES技术：ZENER
端子形式：WRAP AROUND端子位置：END
最大电压容差：1%工作测试电流：320 mA
Base Number Matches：1

JANTXV1N6634DUS 数据手册

 浏览型号JANTXV1N6634DUS的Datasheet PDF文件第2页浏览型号JANTXV1N6634DUS的Datasheet PDF文件第3页浏览型号JANTXV1N6634DUS的Datasheet PDF文件第4页浏览型号JANTXV1N6634DUS的Datasheet PDF文件第5页浏览型号JANTXV1N6634DUS的Datasheet PDF文件第6页浏览型号JANTXV1N6634DUS的Datasheet PDF文件第7页 
INCH POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 24 February 2005.  
MIL-PRF-19500/356H  
24 November 2004  
SUPERSEDING  
MIL-PRF-19500/356G  
5 September 2003  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR,  
TYPES 1N4954 THROUGH 1N4996, 1N5968, 1N5969, AND 1N6632 THROUGH 1N6637,  
1N4954US THROUGH 1N4996US, 1N5968US, 1N5969US, AND 1N6632US THROUGH 1N6637US,  
AND C AND D TOLERANCE SUFFIX DEVICES,  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
*
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for silicon, voltage regulator diodes. Four  
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two  
levels of product assurance for each unencapsulated device type die.  
1.2 Physical dimensions. See figures 1 (axial leaded), 2 (surface mount), and 3 (die).  
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings herein (see 3.10) and as follows:  
PT at  
TL = +65°C  
L = .375 inch  
(9.53 mm)  
1N4954  
PT at  
TL = +25°C  
L = .375 inch (9.53  
mm)  
PT at  
TEC = +125°C  
TJ and TSTG  
Barometric pressure  
reduced (high altitude  
operation)  
1N5968,  
1N5969,  
1N4954US  
through  
1N4954 through  
1N4996  
1N4954 through  
1N4996  
through  
1N4996  
1N6632 through  
1N6637  
1N4996US  
N5968US,  
1N5968,  
1N5969,  
1N5968,  
1N5969,  
1N5969US,  
1N6632US through  
1N6637US  
1N6632 through  
1N6637  
including US suffix  
1N6632 through  
1N6637  
including US suffix  
5 W (1)  
5 W (2)  
5 W (3)  
8 mHg  
-65°C to +175°C  
(1) Derate: See figure 4 herein.  
(2) Derate: See figure 5 herein.  
(3) Derate: See figures 5, 6 and 7 herein.  
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this  
address information using the ASSIST Online database at http://assist.daps.dla.mil..  
AMSC N/A  
FSC 5961.  
1234567...26

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JANTXV1N6634US MICROSEMI

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JANTXV1N6635 MICROSEMI

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JANTXV1N6635C MICROSEMI

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JANTXV1N6635C CDI-DIODE

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 		Zener Diode, 4.3V V(Z), 2%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N6635CUS CDI-DIODE

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 		Zener Diode, 4.3V V(Z), 2%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N6635CUS MICROSEMI

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 		5 WATT GLASS ZENER DIODES
JANTXV1N6635D MICROSEMI

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 		5 WATT GLASS ZENER DIODES
JANTXV1N6635D CDI-DIODE

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 		Zener Diode, 4.3V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2
JANTXV1N6635DUS MICROSEMI

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 		5 WATT GLASS ZENER DIODES
JANTXV1N6635DUS CDI-DIODE

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 		Zener Diode, 4.3V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2

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