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JANTXV1N6630US PDF预览

JANTXV1N6630US

更新时间: 2024-11-21 19:50:03
品牌 Logo 应用领域
SENSITRON 快速恢复能力电源超快恢复二极管快速恢复二极管局域网超快速恢复能力电源
页数 文件大小 规格书
4页 184K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.4A, 900V V(RRM), Silicon, HERMETIC SEALED, MELF-2

JANTXV1N6630US 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:MELF
包装说明:HERMETIC SEALED, MELF-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.47
应用:SUPER FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JESD-30 代码:O-MELF-R2JESD-609代码:e0
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1.4 A封装主体材料:METAL
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Qualified
参考标准:MIL最大重复峰值反向电压:900 V
最大反向电流:2 µA最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JANTXV1N6630US 数据手册

 浏览型号JANTXV1N6630US的Datasheet PDF文件第2页浏览型号JANTXV1N6630US的Datasheet PDF文件第3页浏览型号JANTXV1N6630US的Datasheet PDF文件第4页 
1N6626 thru 1N6631  
SENSITRON  
___  
ULTRAFAST RECTIFIERS  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 5077, REV. B.1  
AV AI L AB L E AS  
1N, JAN, JANTX, JANTXV  
JANS  
JAN EQUIVALENT*  
SJ*, SX*, SV*  
SS  
Standard Recovery Rectifiers  
Qualified per MIL-PRF-19500/590  
DESCRIPTION:  
This voidless hermetically sealed standard recovery rectifier diode series is military qualified per  
MIL-PRF-19500/590 and is targeted for space, commerical and military aircraft, military vehicles,  
shipboard markets and all high reliability applications.  
FEATURES / BENEFITS:  
MAXIMUM RATINGS  
Hermetic, non-cavity glass package  
Category I Metallurgically bonded  
Parts are hot solder dipped  
Operating and Storage Temperature: -65oC to  
+175oC  
Junction Temperature: -65oC to +155oC  
JAN/ JANTX/ JANTXV available per MIL-PRF-  
19500/590  
ELECTRICAL CHARACTERISTICS  
Rating  
Symbol  
Condition  
Max  
Units  
WORKING PEAK REVERSE VOLTAGE  
1N6626, U, US  
200  
400  
600  
800  
900  
1000  
1N6627, U ,US  
1N6628, U, US  
1N6629, U, US  
VRWM  
Volts  
1N66301,,U, US  
AVERAGE RECTIFIED FORWARD CURRENT  
1N6626 thru 1N6628  
2.3  
1.8  
Io  
Io  
TL= 75 oC  
TEC= 110 oC  
Tp=8.3ms  
Tj = 25 oC  
Amps  
Amps  
A(pk)  
1N6629 thru 1N6631  
AVERAGE RECTIFIED FORWARD CURRENT  
4.0  
2.8  
1N6626U, US thru 1N6628U, US  
1N6629U, US thru 1N6631U, US  
PEAK FORWARD SURGE CURRENT  
1N6626, U, US thru 1N6630,U, US  
1N6631, U, US  
MAXIMUM REVERSE CURRENT  
1N6626, U, US thru 1N6630,U, US  
1N6631, U, US  
MAXIMUM REVERSE CURRENT  
1N6626, U, US thru 1N6630,U, US  
1N6631, U, US  
IFSM  
75  
60  
IR @ VRWM  
IR @ VRWM  
2.0  
4.0  
Amps  
Amps  
Tj = 150 oC  
500  
600  
*Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from  
wafer fabrication through assembly and testing using our internal specification.  
©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com  

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