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JANTXV1N5907 PDF预览

JANTXV1N5907

更新时间: 2024-01-28 14:49:34
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管局域网
页数 文件大小 规格书
3页 217K
描述
1500 WATT LOW VOLTAGE TRANSIENT VOLTAGE SUPPRESSOR

JANTXV1N5907 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:DO-13
包装说明:O-MALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.66
Is Samacsys:N最小击穿电压:6 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-202AAJESD-30 代码:O-MALF-W2
JESD-609代码:e0最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1 W
认证状态:Not Qualified参考标准:MIL-19500/500
最大重复峰值反向电压:5 V表面贴装:NO
技术:AVALANCHE端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTXV1N5907 数据手册

 浏览型号JANTXV1N5907的Datasheet PDF文件第2页浏览型号JANTXV1N5907的Datasheet PDF文件第3页 
1N5907 and 1N5908  
1500 WATT LOW VOLTAGE TRANSIENT  
VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This pair of unidirectional low voltage Transient Voltage Suppressor (TVS)  
devices for the 1N5907 and 1N5908 JEDEC registrations with different  
packages have the same high Peak Pulse Power rating of 1500 W with  
extremely fast response times. The 1N5907 is available in a military qualified  
version as described in the Features section herein. They are most often used  
for protecting against transients from inductive switching environments, induced  
RF effects, or induced secondary lightning effects as found in surge levels of  
IEC61000-4-5 described herein. They are also very successful in protecting  
airborne avionics and electrical systems when low voltage is required. Since  
their response time is virtually instantaneous, they can also protect from ESD  
and EFT per IEC61000-4-2 and IEC61000-4-4.  
DO-13  
CASE 1  
Both hermetic seal and molded types are available.  
(DO-202AA)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Unidirectional TVS series for thru-hole mounting  
Protection from switching transients and induced RF  
Suppresses transients up to 1500 watts @ 10/1000 µs (Figure 1)  
Protects TTL, ECL, DTL, MOS, MSI, and other  
integrated circuits requiring 5.0 V or lower power  
supplies  
in less than 100 pico seconds  
Low working voltage (VWM) of 5 V  
Protection from ESD and EFT per IEC 61000-4-2 and  
Hermetic sealed DO-13 metal package for 1N5907 and plastic  
IEC 61000-4-4  
“Case 1” for 1N5908  
Secondary lightning protection per IEC61000-4-5 with  
JAN/TX/TXV military qualification available for 1N5907 per MIL-  
PRF-19500/500 by adding JAN, JANTX, or JANTXV prefix, e.g.  
JANTXV1N5907  
Surface mount equivalent packages also available as SMCJ5.0  
or SMCG5.0 in separate data sheet (consult factory for other  
surface mount options)  
42 Ohms source impedance: Class 1 thru 4  
Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance: Class 1 thru 4  
Secondary lightning protection per IEC61000-4-5 with  
2 Ohms source impedance: Class 2 & 3  
1N5907 Inherently radiation hard as described in  
Microsemi MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
1500 Watts for 10/1000 µs at lead temperature (TL) 25oC (See Figs.  
CASE (1N5907): DO-13 (DO-202AA) welded  
1, 2, and 4) with repetition rate of 0.01% or less*  
hermetically sealed metal and glass  
Operating & Storage Temperatures: -65o to +175oC for 1N5907  
and  
Case (1N5908): “Case 1” Void Free transfer molded  
thermosetting epoxy body meeting UL94V-0  
-65o to +150oC for 1N5908  
FINISH: External metal surfaces are Tin-Lead (Sn-  
Pb) plated and solderable per MIL-STD-750 method  
2026  
THERMAL RESISTANCE (junction to lead): 50oC/W for 1N5907 or  
22 oC/W for 1N5908 at 0.375 inches (10 mm) from body  
THERMAL RESISTANCE (junction to ambient): 110 oC/W for  
1N5907, or 82 oC/W for 1N5908 when mounted on FR4 PC board  
with 4 mm2 copper pads (1 oz) and track width 1 mm, length 25 mm  
POLARITY: Polarity indicated by diode symbol or  
cathode band (cathode connected to case for 1N5907)  
MARKING: Part number and polarity symbol  
WEIGHT: 1.4 grams. (Approx)  
DC Power Dissipation* (1N5907): 1 Watt at TL <125oC 3/8” (10  
mm) from body, or 1 Watt at TA +65oC when mounted on FR4 PC  
board as described for thermal resistance junction to ambient  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
DC Power Dissipation* (1N5908): 5 Watts at TL <+40oC 3/8” (10  
mm) from body, or 1.52 Watts at TA = +25oC when mounted on FR4  
PC board as described for thermal resistance junction to ambient  
See package dimension on last page  
Forward surge current: 200 A for 8.3ms half-sine wave at TA =  
+25oC  
Solder Temperatures: 260 o C for 10 s (maximum)  
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage  
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).  
Copyright 2002  
Microsemi  
Page 1  
11-06-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

JANTXV1N5907 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N5907 MICROSEMI

完全替代

1500 WATT LOW VOLTAGE TRANSIENT VOLTAGE SUPPRESSOR
JAN1N5907 MICROSEMI

完全替代

1500 WATT LOW VOLTAGE TRANSIENT VOLTAGE SUPPRESSOR
1N5907 MICROSEMI

完全替代

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