Datasheet > JANTXV1N4119DUR-1

JANTXV1N4119DUR-1

更新时间： 2024-11-16 18:30:43

品牌	Logo	应用领域
CDI-DIODE		测试二极管
页数	文件大小	规格书
25页	225K
描述
Zener Diode, 28V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JANTXV1N4119DUR-1 技术参数

生命周期：	Obsolete	包装说明：	O-LELF-R2
Reach Compliance Code：	unknown	风险等级：	5.71
Is Samacsys：	N	其他特性：	METALLURGICALLY BONDED
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-213AA	JESD-30 代码：	O-LELF-R2
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	0.5 W	认证状态：	Not Qualified
参考标准：	MIL-19500/435F	标称参考电压：	28 V
表面贴装：	YES	技术：	ZENER
端子形式：	WRAP AROUND	端子位置：	END
最大电压容差：	1%	工作测试电流：	0.25 mA
Base Number Matches：	1

JANTXV1N4119DUR-1 数据手册

浏览型号JANTXV1N4119DUR-1的Datasheet PDF文件第2页

浏览型号JANTXV1N4119DUR-1的Datasheet PDF文件第3页

浏览型号JANTXV1N4119DUR-1的Datasheet PDF文件第4页

浏览型号JANTXV1N4119DUR-1的Datasheet PDF文件第5页

浏览型号JANTXV1N4119DUR-1的Datasheet PDF文件第6页

浏览型号JANTXV1N4119DUR-1的Datasheet PDF文件第7页

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 18 August 2007.

INCH-POUND

MIL-PRF-19500/435H

18 May 2007

SUPERSEDING

MIL-PRF-19500/435G

10 November 2005

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES

1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,

1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage

regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are

provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for

each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.

* 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC).

* 1.3 Maximum ratings Unless otherwise specified T_C= 25°C. Maximum ratings are as shown in maximum test

ratings herein (see 3.8), and as follows:

P_TL= 500 mW (DO-35) at T_L= 50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at

L = .375 inch (9.53 mm). (Derate I_Zto 0.0 mA dc at +175°C).

_TEC= 500 mW (DO-213AA) at T_EC= 125°C. (Derate to 0 at 175°C). -65°C ≤ T_J≤ +175°C; -65°C ≤ T_STG

≤ +175°C.

= 400 mW, T = +55°C. (Derate to 0 at +55°C).

TPCB

Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil.

Since contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...25

中文翻译

下载PDF

与JANTXV1N4119DUR-1相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N4119DURTR	MICROSEMI	获取价格	GLASS SURFACE MOUNT 0.5 WATT ZENERS
JANTXV1N4119DURTR-1	MICROSEMI	获取价格	GLASS SURFACE MOUNT 0.5 WATT ZENERS
JANTXV1N4119UR	MICROSEMI	获取价格	GLASS SURFACE MOUNT 0.5 WATT ZENERS
JANTXV1N4119UR-1	MICROSEMI	获取价格	SILICON 400mA LOW NOISE ZENER DIODES
JANTXV1N4119UR-1	SENSITRON	获取价格	MIL-PRF-19500/435 500mW Zener Diode
JANTXV1N4119URTR	MICROSEMI	获取价格	GLASS SURFACE MOUNT 0.5 WATT ZENERS
JANTXV1N4119URTR-1	MICROSEMI	获取价格	GLASS SURFACE MOUNT 0.5 WATT ZENERS
JANTXV1N4120	MICROSEMI	获取价格	SILICON 400mA LOW NOISE ZENER DIODES
JANTXV1N4120	MOTOROLA	获取价格	30V, 0.25W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-7
JANTXV1N4120/TR	MICROSEMI	获取价格	Zener Diode, 30V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLAS

与JANTXV1N4119DUR-1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

12
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

6
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

33
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

30

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV1N4119DUR-1

JANTXV1N4119DUR-1 技术参数

JANTXV1N4119DUR-1 数据手册

与JANTXV1N4119DUR-1相关器件

与JANTXV1N4119DUR-1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTXV1N4119DUR-1

JANTXV1N4119DUR-1 技术参数

JANTXV1N4119DUR-1 数据手册

与JANTXV1N4119DUR-1相关器件

与JANTXV1N4119DUR-1相关文章

您还可以找

您在本页遇到什么问题？