Datasheet > JANTX469-02

JANTX469-02

更新时间： 2024-11-25 14:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	204K
描述
Bridge Rectifier Diode, Avalanche, 1 Phase, 10A, Silicon, HERMETIC SEALED, PLASTIC PACKAGE-4

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JANTX469-02 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	S-PUFM-X4
针数：	4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.92	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	最小击穿电压：	460 V
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	S-PUFM-X4
JESD-609代码：	e0	最大非重复峰值正向电流：	100 A
元件数量：	4	相数：	1
端子数量：	4	最大输出电流：	10 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	参考标准：	MIL-19500/469
表面贴装：	NO	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	UNSPECIFIED
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JANTX469-02 数据手册

469-01, 469-02, and 469-03

SINGLE PHASE 10 AMP

RECTIFIER BRIDGES

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This series of high-current single-phase bridge rectifiers are constructed with

hermetically sealed rectifiers with the same design and construction as used in

military applications for the utmost in reliability. They can also be optionally obtained

with formal military screened diodes that have been subjected to 100% screening and

military qualified to MIL-PRF-19500/469 that are ideal for high-reliability applications

where a failure cannot be tolerated. These industry-recognized 10 Amp rated rectifier

bridges with working peak reverse voltages from 200 to 600 volts for each leg use

diodes that are hermetically sealed with voidless-glass construction using an internal

“Category I” metallurgical bond. Microsemi also offers numerous other rectifier

products to meet higher and lower current ratings with various recovery time speed

requirements including fast and ultrafast device types in both through-hole and

surface mount packages.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Voidless hermetically sealed glass packages used

internally for each leg

•

Conversion of single phase ac to dc current flow

Working Peak Reverse Voltages 200 to 600 V

•

Triple-layer passivation

Military and other high-reliability applications

High forward surge current capability

Low thermal resistance

Extremely robust construction

Inherently radiation hard as described in Microsemi

MicroNote 050

Internal “Category I” Metallurgical bonds

JANTX and JANTXV available per MIL-PRF-19500/469

Controlled Avalanche Characteristics

Surge ratings of 100 Amps

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +150^oC

Storage Temperature: -65^oC to +150^oC

•

CASE: Epoxy filled case with hermetically sealed

void-less hard glass rectifiers with Tungsten slugs

TERMINALS: Nickel plated brass with optional hot

Tin-Lead solder dip

Maximum Avg Output Current: 10 Amps @ T_C= 55°C

and 6 Amps @ T_C= 100°C. Derate @ 88 mA / ^oC

between 55°C and 100°C. Derate @ 120 mA/ ^oC

above 100°C.

•

MARKING: Part number on one side of case

POLARITY: Marked on body adjacent to terminals

(see terminal polarity marking on last page and

flattened corner on case for pin 1)

•

Non-repetitive Forward Surge Current (8.3 ms half

sine): 100 Amps @ T_C= 55°C

Solder temperatures (terminals): 260^oC for 10 s

(maximum)

•

WEIGHT: 7.7 grams

See package dimensions on last page

ELECTRICAL CHARACTERISTICS

MINIMUM

BREAKDOWN

VOLTAGE

Per Leg

WORKING

PEAK

AVERAGE

RECTIFIED

CURRENT

AVERAGE

RECTIFIED

CURRENT

MAXIMUM REVERSE

CURRENT PER LEG

I_R@ V_RWM

FORWARD

VOLTAGE

V_F@ 15.7 A

(pk) @ 8.3 ms

Duty Cycle

≤ 2%

TYPE

REVERSE

RECOVERY

t_rr

REVERSE

VOLTAGE

V_RWM

I_O1

I_O2@

T_C=+55^oC

Note 1

T_C=+100^oC

Note 2

V_BR

Note 3

@50μA

T_C= 25°C

T_C= 100°C

VOLTS

Volts

1.35

AMPS

μA

μs

2.5

469-01

469-02

469-03

240

460

660

200

400

600

125

NOTE 1: Rated at T_C= 55ºC with reference to metal case. Derate linearly at 88 mA/ºC between T_C= 55ºC and T_C= 100ºC

NOTE 2: Derate linearly at 120 mA/ºC above T_C= 100ºC.

NOTE 3: I_F= 0.5 A, I_RM= 1.0 A, I_R(REC)= .250 A

NOTE 4: Point at which T_Cis referenced shall be in metal part of case as shown in drawing on last page.

11-05-09 Rev B; 469-1.pdf

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与JANTX469-02相关器件

型号	品牌	获取价格	描述	数据表
JANTX469-03	MICROSEMI	获取价格	Bridge Rectifier Diode, Avalanche, 1 Phase, 10A, Silicon, HERMETIC SEALED, PLASTIC PACKAGE
JANTX469-1	MICROSEMI	获取价格	RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 10 AMP, Military Approved
JANTX469-2	MICROSEMI	获取价格	RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 10 AMP, Military Approved
JANTX469-3	MICROSEMI	获取价格	RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 10 AMP, Military Approved
JANTX483-1	MICROSEMI	获取价格	RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 25 AMP, MILITARY APPROVED
JANTX483-2	MICROSEMI	获取价格	RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 25 AMP, MILITARY APPROVED
JANTX483-3	MICROSEMI	获取价格	RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 25 AMP, MILITARY APPROVED
JANTX4954US	MICROSEMI	获取价格	Zener Diode, 6.8V V(Z), 5%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D58, 2 PI
JANTX4955USC	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 2%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D58, 2 PI
JANTX4955USD	MICROSEMI	获取价格	Zener Diode, 7.5V V(Z), 1%, 5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D58, 2 PI

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