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JANTX469-02

更新时间： 2024-01-30 12:32:26
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 204K
描述
Bridge Rectifier Diode, Avalanche, 1 Phase, 10A, Silicon, HERMETIC SEALED, PLASTIC PACKAGE-4

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JANTX469-02 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Obsolete包装说明：S-PUFM-X4
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.92Is Samacsys：N
其他特性：HIGH RELIABILITY最小击穿电压：460 V
配置：BRIDGE, 4 ELEMENTS二极管元件材料：SILICON
二极管类型：BRIDGE RECTIFIER DIODEJESD-30 代码：S-PUFM-X4
JESD-609代码：e0最大非重复峰值正向电流：100 A
元件数量：4相数：1
端子数量：4最大输出电流：10 A
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified参考标准：MIL-19500/469
表面贴装：NO技术：AVALANCHE
端子面层：TIN LEAD端子形式：UNSPECIFIED
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

JANTX469-02 数据手册

 浏览型号JANTX469-02的Datasheet PDF文件第2页浏览型号JANTX469-02的Datasheet PDF文件第3页 
469-01, 469-02, and 469-03  
SINGLE PHASE 10 AMP  
RECTIFIER BRIDGES  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This series of high-current single-phase bridge rectifiers are constructed with  
hermetically sealed rectifiers with the same design and construction as used in  
military applications for the utmost in reliability. They can also be optionally obtained  
with formal military screened diodes that have been subjected to 100% screening and  
military qualified to MIL-PRF-19500/469 that are ideal for high-reliability applications  
where a failure cannot be tolerated. These industry-recognized 10 Amp rated rectifier  
bridges with working peak reverse voltages from 200 to 600 volts for each leg use  
diodes that are hermetically sealed with voidless-glass construction using an internal  
“Category I” metallurgical bond. Microsemi also offers numerous other rectifier  
products to meet higher and lower current ratings with various recovery time speed  
requirements including fast and ultrafast device types in both through-hole and  
surface mount packages.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Voidless hermetically sealed glass packages used  
internally for each leg  
•
•
•
•
•
•
•
Conversion of single phase ac to dc current flow  
Working Peak Reverse Voltages 200 to 600 V  
•
•
•
•
•
Triple-layer passivation  
Military and other high-reliability applications  
High forward surge current capability  
Low thermal resistance  
Extremely robust construction  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
Internal “Category I” Metallurgical bonds  
JANTX and JANTXV available per MIL-PRF-19500/469  
Controlled Avalanche Characteristics  
Surge ratings of 100 Amps  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Junction Temperature: -65oC to +150oC  
Storage Temperature: -65oC to +150oC  
•
•
CASE: Epoxy filled case with hermetically sealed  
void-less hard glass rectifiers with Tungsten slugs  
TERMINALS: Nickel plated brass with optional hot  
Tin-Lead solder dip  
Maximum Avg Output Current: 10 Amps @ TC = 55°C  
and 6 Amps @ TC = 100°C. Derate @ 88 mA / oC  
between 55°C and 100°C. Derate @ 120 mA/ oC  
above 100°C.  
•
•
MARKING: Part number on one side of case  
POLARITY: Marked on body adjacent to terminals  
(see terminal polarity marking on last page and  
flattened corner on case for pin 1)  
•
•
Non-repetitive Forward Surge Current (8.3 ms half  
sine): 100 Amps @ TC = 55°C  
Solder temperatures (terminals): 260oC for 10 s  
(maximum)  
•
•
WEIGHT: 7.7 grams  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
MINIMUM  
BREAKDOWN  
VOLTAGE  
Per Leg  
WORKING  
PEAK  
AVERAGE  
RECTIFIED  
CURRENT  
AVERAGE  
RECTIFIED  
CURRENT  
MAXIMUM REVERSE  
CURRENT PER LEG  
IR @ VRWM  
FORWARD  
VOLTAGE  
VF @ 15.7 A  
(pk) @ 8.3 ms  
Duty Cycle  
≤ 2%  
TYPE  
REVERSE  
RECOVERY  
trr  
REVERSE  
VOLTAGE  
VRWM  
IO1  
@
IO2 @  
TC=+55oC  
Note 1  
TC=+100oC  
Note 2  
VBR  
Note 3  
@50μA  
TC = 25°C  
TC = 100°C  
VOLTS  
VOLTS  
Volts  
1.35  
1.35  
1.35  
AMPS  
10  
10  
AMPS  
μA  
2
2
μA  
μs  
2.5  
2.5  
2.5  
469-01  
469-02  
469-03  
240  
460  
660  
200  
400  
600  
6
6
6
125  
125  
125  
10  
2
NOTE 1: Rated at TC = 55ºC with reference to metal case. Derate linearly at 88 mA/ºC between TC = 55ºC and TC = 100ºC  
NOTE 2: Derate linearly at 120 mA/ºC above TC = 100ºC.  
NOTE 3: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A  
NOTE 4: Point at which TC is referenced shall be in metal part of case as shown in drawing on last page.  
Copyright © 2009  
11-05-09 Rev B; 469-1.pdf  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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