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JANTX2N7225U PDF预览

JANTX2N7225U

更新时间: 2023-12-06 20:12:26
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描述
200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7225U with Hermetic Packaging

JANTX2N7225U 数据手册

 浏览型号JANTX2N7225U的Datasheet PDF文件第1页浏览型号JANTX2N7225U的Datasheet PDF文件第3页浏览型号JANTX2N7225U的Datasheet PDF文件第4页浏览型号JANTX2N7225U的Datasheet PDF文件第5页浏览型号JANTX2N7225U的Datasheet PDF文件第6页浏览型号JANTX2N7225U的Datasheet PDF文件第7页 
IRFN250  
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source Breakdown Voltage  
200  
V
V
= 0V, I = 1.0mA  
D
GS  
V/°C Reference to 25°C, I = 1.0mA  
BV  
/T Temperature Coefficient of Breakdown  
0.29  
DSS  
J
D
Voltage  
R
Static Drain-to-Source On-State  
Resistance  
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
2.0  
9.0  
0.100  
0.105  
4.0  
V
= 10V, I = 17A  
D
DS(on)  
GS  
= 10V, I = 27.4A  
V
GS  
D
V
V
V
= V , I = 250µA  
GS(th)  
fs  
DS  
GS  
D
g
S ( )  
V
> 15V, I  
= 17A ➀  
DS  
DS  
I
25  
250  
V
= 160V ,V =0V  
DSS  
DS GS  
µA  
V
= 160V,  
DS  
= 0V, T = 125°C  
V
GS  
GS  
J
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
4.0  
100  
-100  
115  
22  
V
= 20V  
GSS  
GSS  
GS  
nA  
nC  
V
GS  
= -20V  
Q
Q
Q
V
=10V, I = 27.4A  
g
gs  
gd  
d(on)  
r
D
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
FallTime  
V
= 100V  
DS  
60  
t
t
t
t
35  
V
DD  
= 100V, I = 27.4A,  
D
190  
170  
130  
V
=10V, R = 2.35Ω  
GS G  
ns  
d(off)  
f
Measured from the center of drain  
pad to center of source pad.  
L
S
+ L  
Total Inductance  
D
nH  
C
C
C
Input Capacitance  
3500  
700  
110  
V
= 0V, V  
= 25V  
iss  
GS  
DS  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
pF  
oss  
rss  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
V
t
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) ➀  
Diode Forward Voltage  
27.4  
110  
1.9  
S
A
SM  
V
T = 25°C, I = 27.4A, V  
= 0V ➀  
GS  
j
SD  
rr  
S
Reverse Recovery Time  
950  
9.0  
nS  
µC  
T = 25°C, I = 27.4A, di/dt 100A/µs  
j
F
V
Q
Reverse Recovery Charge  
30V ➀  
DD  
RR  
t
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
R
Junction-to-Case  
0.83  
thJC  
°C/W  
Junction-to-PC board  
3.0  
Soldered to a copper-clad PC board  
thJ-PCB  
Note: Corresponding Spice and Saber models are available on the G&S Website.  
For footnotes refer to the last page  
2
www.irf.com  

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