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JANTX2N7227U PDF预览

JANTX2N7227U

更新时间: 2024-11-25 14:56:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 271K
描述
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTX2N7227U with Hermetic Packaging

JANTX2N7227U 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:HERMETIC SEALED, SMD1, 3 PINReach Compliance Code:compliant
风险等级:5.17Is Samacsys:N
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):700 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:400 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.415 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):56 A
认证状态:Qualified参考标准:MIL-19500/592
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANTX2N7227U 数据手册

 浏览型号JANTX2N7227U的Datasheet PDF文件第2页浏览型号JANTX2N7227U的Datasheet PDF文件第3页浏览型号JANTX2N7227U的Datasheet PDF文件第4页浏览型号JANTX2N7227U的Datasheet PDF文件第5页浏览型号JANTX2N7227U的Datasheet PDF文件第6页浏览型号JANTX2N7227U的Datasheet PDF文件第7页 
PD-91551D  
IRFN350  
JANTX2N7227U  
JANTXV2N7227U  
POWER MOSFET  
SURFACE MOUNT(SMD-1)  
REF:MIL-PRF-19500/592  
400V, N-CHANNEL  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFN350  
0.315 Ω  
14A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry design achieves very low on-  
state resistance combined with high transconductance.  
HEXFET transistors also feature all of the well-  
established advantages of MOSFETs, such as voltage  
control, very fast switching, ease of paralleling and  
electrical parameter temperature stability. They are well-  
suited for applications such as switching power supplies,  
motor controls, inverters, choppers, audio amplifiers,  
high energy pulse circuits, and virtually any application  
where high reliability is required. The HEXFET  
transistor’s totally isolated package eliminates the need  
for additional isolating material between the device and  
the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
SMD-1  
Features:  
n
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Surface Mount  
Dynamic dv/dt Rating  
Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
14  
9.0  
D
D
GS  
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
56  
DM  
@ T = 25°C  
P
D
150  
1.2  
W
W/°C  
V
C
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
700  
14  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
4.0  
T
-55 to 150  
J
T
Storage Temperature Range  
Pckg. Mounting Surface Temperature  
Weight  
°C  
g
STG  
300 (for 5 sec)  
2.6 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
12/12/07  

JANTX2N7227U 替代型号

型号 品牌 替代类型 描述 数据表
IRFM350 INFINEON

完全替代

POWER MOSFET THRU-HOLE (TO-254AA)
JANTXV2N7227 MICROSEMI

类似代替

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592

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