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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| JANTX1N5711UBCC | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 2 Element, 0.033A, Silicon, LEADLESS, CERAMIC PACKAGE-3 |
|
| JANTX1N5711UBD | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 2 Element, 0.033A, Silicon, LEADLESS, CERAMIC PACKAGE-3 |
|
| JANTX1N5711UR-1 | MICROSEMI |
获取价格 |
SCHOTTKY BARRIER DIODES |
|
| JANTX1N5712-1 | CDI-DIODE |
获取价格 |
SCHOTTKY BARRIER DIODES |
|
| JANTX1N5712-1 | MICROSEMI |
获取价格 |
Schottky Barrier Diode Qualified per MIL-PRF-19500/444 |
|
| JANTX1N5712-1E3 | MICROSEMI |
获取价格 |
Schottky Barrier Diode Qualified per MIL-PRF-19500/444 |
|
| JANTX1N5712UBCA | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 2 Element, 0.075A, Silicon, LEADLESS, CERAMIC PACKAGE-3 |
|
| JANTX1N5712UBCC | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 2 Element, 0.075A, Silicon, LEADLESS, CERAMIC PACKAGE-3 |
|
| JANTX1N5712UBD | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 2 Element, 0.075A, Silicon, LEADLESS, CERAMIC PACKAGE-3 |
|
| JANTX1N5712UR-1 | MICROSEMI |
获取价格 |
SCHOTTKY BARRIER DIODES |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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