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JANTX1N5303UR

更新时间： 2024-11-16 14:04:55
品牌 Logo 应用领域
CDI-DIODE 二极管
页数 文件大小 规格书
17页 95K
描述
Current Regulator Diode, 1.6mA I(S), 1.65V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2

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JANTX1N5303UR 技术参数

生命周期：Obsolete包装说明：HERMETIC SEALED PACKAGE-2
Reach Compliance Code：unknown风险等级：5.7
Is Samacsys：N外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：CURRENT REGULATOR DIODEJEDEC-95代码：DO-213AB
JESD-30 代码：O-XELF-R2最大限制电压：1.65 V
元件数量：1端子数量：2
封装主体材料：UNSPECIFIED封装形状：ROUND
封装形式：LONG FORM认证状态：Not Qualified
参考标准：MIL-19500/463G标称调节电流 (Ireg)：1.6 mA
表面贴装：YES技术：FIELD EFFECT
端子形式：WRAP AROUND端子位置：END
Base Number Matches：1

JANTX1N5303UR 数据手册

 浏览型号JANTX1N5303UR的Datasheet PDF文件第2页浏览型号JANTX1N5303UR的Datasheet PDF文件第3页浏览型号JANTX1N5303UR的Datasheet PDF文件第4页浏览型号JANTX1N5303UR的Datasheet PDF文件第5页浏览型号JANTX1N5303UR的Datasheet PDF文件第6页浏览型号JANTX1N5303UR的Datasheet PDF文件第7页 
INCH-POUND  
MIL-PRF-19500/463G  
2 April 2004  
SUPERSEDING  
MIL-PRF-19500/463F  
24 June 2003  
The documentation and process conversion  
measures necessary to comply with this  
revision shall be completed by 2 July 2004.  
* PERFORMANCE SPECIFICATION SHEET  
* SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR, TYPES 1N5283-1  
THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1, 1N7048-1 THROUGH 1N7055-1,  
1N7048UR-1 THROUGH 1N7055UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
* The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.  
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.  
Two levels of product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).  
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:  
a. P = 500 mW (DO-7) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink  
T
L
at L = .375 inch (9.53 mm). (Derate to 0 at +175°C).  
b. P = 500 mW (DO-213AB) at T  
= +125°C. (Derate to 0 at +175°C).  
T
EC  
c. -65°C ≤ T ≤ +175°C; -65°C ≤ T  
≤ +175°C.  
j
STG  
1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)  
and as follows, (nominally .22 mA dc ≤ I ≤ 4.70 mA dc):  
P
a. R  
b. R  
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).  
ΘJL  
= 100°C/W (maximum) junction to end-caps (DO-213AB).  
ΘJEC  
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to  
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at http://www.dodssp.daps.mil.  
AMSC N/A  
FSC 5961  
1234567...17

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