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JANTX1N5196 PDF预览

JANTX1N5196

更新时间: 2024-11-24 20:05:11
品牌 Logo 应用领域
CDI-DIODE 二极管
页数 文件大小 规格书
2页 31K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, GLASS PACKAGE-2

JANTX1N5196 技术参数

生命周期:Transferred包装说明:GLASS PACKAGE-2
Reach Compliance Code:unknown风险等级:5.69
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
参考标准:MIL-19500/118F表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

JANTX1N5196 数据手册

 浏览型号JANTX1N5196的Datasheet PDF文件第2页 
1N5194  
1N5195  
1N5196  
• AVAILABLE IN JAN, JANTX, AND JANTXV  
PER MIL-PRF-19500/118  
• GENERAL PURPOSE SILICON DIODES  
• METALLURGICALLY BONDED  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Operating Current: 200 mA  
Derating: 1.2 mA/°C From 25°C to 150°C  
1.0 mA/°C From 150°C to 175°C  
Forward Current: 650 mA  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified  
TYPE  
V
V
I
I
I
FSM  
RM  
RWM  
O
O
T
= 150°C  
T
= 1/120 s  
A
P
T
= 25°C  
A
V (pk)  
V (pk)  
mA  
mA  
A
1N5194  
1N5195  
1N5196  
80  
180  
250  
70  
180  
225  
200  
200  
200  
50  
50  
50  
2
2
2
FIGURE 1  
DESIGN DATA  
TYPE  
V
F
I
V
I
V
I
V
R1 at RWM  
R2 at RM  
R3 at RWM  
@100mA  
T
= 25°C  
T
= 25°C  
T
= 150°C  
A
A
A
CASE: Hermetically sealed glass  
V dc  
nA dc  
µA  
µA dc  
case. DO – 35 outline.  
1N5194  
1N5195  
1N5196  
0.8 - 1.0  
0.8 - 1.0  
0.8 - 1.0  
25  
25  
25  
100  
100  
100  
5
5
5
LEAD MATERIAL: Copper clad steel.  
LEAD FINISH: Tin / Lead  
THERMAL RESISTANCE: (R  
250 ˚C/W maximum  
):  
OJEC  
THERMAL IMPEDANCE: (Z  
˚C/W maximum  
): 70  
JX  
O
POLARITY: Cathode end is banded.  
MOUNTING POSITION: ANY.  
22 COREY STREET, MELROSE, MASSACHUSETTS 02176  
PHONE (781) 665-1071  
WEBSITE: http://www.cdi-diodes.com  
FAX (781) 665-7379  
E-mail: mail@cdi-diodes.com  

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