是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-213AA |
包装说明: | O-LELF-R2 | 针数: | 2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.27 |
其他特性: | METALLURGICALLY BONDED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | DO-213AA |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 最大功率耗散: | 0.5 W |
认证状态: | Qualified | 参考标准: | MIL-19500/157P |
标称参考电压: | 11.7 V | 表面贴装: | YES |
技术: | ZENER | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 电压温度Coeff-Max: | 0.0585 mV/ °C |
最大电压容差: | 4.96% | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS1N962 | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 20%, 0.4W, Silicon, Unidirectional, DO-35 | |
JANS1N962A | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 10%, 0.4W, Silicon, Unidirectional, DO-35 | |
JANS1N962B | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.4W, Silicon, Unidirectional, DO-35 | |
JANS1N962B-1 | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.4W, Silicon, Unidirectional | |
JANS1N962C | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 2%, 0.4W, Silicon, Unidirectional, DO-35 | |
JANS1N962D | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 1%, 0.4W, Silicon, Unidirectional, DO-35 | |
JANS1N963 | MICROSEMI |
获取价格 |
Zener Diode, 12V V(Z), 20%, 0.4W, Silicon, Unidirectional, DO-35 | |
JANS1N963A | MICROSEMI |
获取价格 |
Zener Diode, 12V V(Z), 10%, 0.4W, Silicon, Unidirectional, DO-35 | |
JANS1N963B | MICROSEMI |
获取价格 |
Zener Diode, 12V V(Z), 5%, 0.4W, Silicon, Unidirectional, DO-35 | |
JANS1N963B-1 | MICROSEMI |
获取价格 |
Zener Diode, 12V V(Z), 5%, 0.4W, Silicon, Unidirectional, |