JAN1N966BUR-1

更新时间： 2024-11-30 23:01:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		稳压二极管齐纳二极管测试
页数	文件大小	规格书
3页	215K
描述
Silicon 500 mW Zener Diodes

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

JAN1N966BUR-1 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	O-LELF-R2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.27
Is Samacsys：	N	其他特性：	METALLURGICALLY BONDED
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-213AA	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	0.5 W
认证状态：	Qualified	参考标准：	MIL-19500/117
标称参考电压：	16 V	表面贴装：	YES
技术：	ZENER	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	5%
工作测试电流：	7.8 mA	Base Number Matches：	1

JAN1N966BUR-1 数据手册

1N957B, -1 thru 1N992B, -1 DO-35

Silicon 500 mW Zener Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The popular 1N957B thru 1N992B series of 0.5 watt Zener Voltage

Regulators provides a selection from 6.8 to 200 volts in standard 5% or

10% tolerances as well as tighter tolerances identified by different suffix

letters on the part number. These glass axial-leaded DO-35 Zeners are

also available with an internal-metallurgical-bond option by adding a “-1”

suffix. The 1N962B-1 thru 1N992B-1 are available in JAN, JANTX, and

JANTXV military qualifications. Microsemi also offers numerous other

Zener products to meet higher and lower power applications.

DO-35

(DO-204AH)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N957B(-1) to 1N992B(-1) series

•

Regulates voltage over a broad operating

current and temperature range

Extensive selection from 6.8 to 200 V

Standard voltage tolerances are plus/minus 5%

with B suffix, 10 % with A suffix identification

Tight tolerances available in plus or minus 2%

or 1% with C or D suffix respectively

Internal metallurgical bond option available by

adding a “-1” suffix

•

Also available in JAN, JANTX, and JANTXV

qualifications per MIL-PRF-19500/117 by adding the

JAN, JANTX, or JANTXV prefixes to part numbers

for desired level of screening as well as “-1” suffix;

(e.g. JANTX1N962B-1, JANTXV1N986C-1, etc.)

•

Flexible axial-lead mounting terminals

•

Military Surface Mount equivalents also available in

DO-213AA by adding a UR-1 suffix in addition to the

JAN, JANTX, and JANTXV prefix; e.g.

Nonsensitive to ESD per MIL-STD-750 Method

1020

JANTX1N962BUR-1 (see separate data sheet)

•

Minimal capacitance (see Figure 3)

Commercial Surface Mount equivalents available as

MLL957B to MLL992B or with “-1” suffix for bonded

in the DO-213AA MELF style package (consult

factory for others)

Inherently radiation hard as described in

Microsemi MicroNote 050

DO-7 glass body axial-leaded Zener equivalents are

also available

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Operating and Storage temperature: -65^ºC to

•

CASE: Hermetically sealed axial-lead glass

+175^ºC

DO-35 (DO-204AH) package

• Thermal Resistance: 250 ^ºC/W junction to lead at 3/8

(10 mm) lead length from body, or 310^ºC/W junction

to ambient when mounted on FR4 PC board (1 oz

Cu) with 4 mm²copper pads and track width 1 mm,

length 25 mm

TERMINALS: Leads, tin-lead plated solderable

per MIL-STD-750, method 2026

POLARITY: Cathode indicated by band. Diode

to be operated with the banded end positive

with respect to the opposite end for Zener

regulation

• Steady-State Power: 0.5 watts at T_L< 50^oC 3/8 inch

(10 mm) from body or 0.48 W at T_A< 25^ºC when

mounted on FR4 PC board as described for thermal

resistance above (also see Figure1)

•

MARKING: Part number

TAPE & REEL option: Standard per EIA-296

(add “TR” suffix to part number)

• Forward voltage @200 mA: 1.1 volts (maximum) for

•

WEIGHT: 0.2 grams

See package dimensions on last page

1N957B – 1N985B and 1.3 V for 1N985 – 1N992B

• Solder Temperatures: 260 ^ºC for 10 s (max)

10-31-2003 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

JAN1N966BUR-1 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV1N966BUR-1	MICROSEMI	完全替代	Silicon 500 mW Zener Diodes
JANTX1N966BUR-1	MICROSEMI	完全替代	Silicon 500 mW Zener Diodes
CDLL966B	MICROSEMI	类似代替	ZENER DIODES

与JAN1N966BUR-1相关器件

型号	品牌	获取价格	描述	数据表
JAN1N966C	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JAN1N966C-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JAN1N966C-1	CDI-DIODE	获取价格	Zener Diode, 16V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-204AH,
JAN1N966CUR-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JAN1N966CUR-1	CDI-DIODE	获取价格	Zener Diode, 16V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA,
JAN1N966D	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JAN1N966D-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JAN1N966D-1	CDI-DIODE	获取价格	Zener Diode, 16V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH,
JAN1N966DUR-1	CDI-DIODE	获取价格	Zener Diode, 16V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA,
JAN1N966DUR-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes

与JAN1N966BUR-1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

JAN1N966BUR-1

JAN1N966BUR-1 技术参数

JAN1N966BUR-1 数据手册

JAN1N966BUR-1 替代型号

与JAN1N966BUR-1相关器件

与JAN1N966BUR-1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JAN1N966BUR-1

JAN1N966BUR-1 技术参数

JAN1N966BUR-1 数据手册

JAN1N966BUR-1 替代型号

与JAN1N966BUR-1相关器件

与JAN1N966BUR-1相关文章

您还可以找

您在本页遇到什么问题？