JAN1N645-1X

更新时间： 2024-10-03 13:08:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管
页数	文件大小	规格书
3页	171K
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JAN1N645-1X 数据手册

1N645 to 649

Silicon Rectifier Diodes

DO-35 Glass Package

1N645-1 to 649-1

Use Advantages

Used as a general purpose rectifier in power supplies, or for clipping and

steering applications.

High performance alternative to small signal diodes where space does not

permit use of power rectifiers.

May be used in hostile environments where hermeticity and reliability are

important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.

Available up to JANTXV-1 level.

"S" level screening capability to Source Control Drawings.

Features

DO -35 G lass Package

Six Sigma quality

Lead Dia.

0.018-0.022"

0.458-0.558 mm

Humidity proof glass

Metallurgicallybonded

Thermally matched system

No thermal fatigue

High surge capability

Dia.

0.06-0.09"

1.0"

25.4 m m

(M in.)

Length

0.120-.200"

3.05-5.08- mm

1.53-2.28 mm

Sigma Bond™ plated contacts

100% guaranteed solderability

(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available

Absolute Maximum Ratings

Symbol

P_tot

Value

600

Unit

mWatts

mAmps

^oC

Power Dissipation at 3/8" from the body, T_L= 75 ^oC

AverageForwardRectifiedCurrentatT_L= 75 ^oC

OperatingandStorageTemperatureRange

ThermalImpedance

I_AV

400

T_O&S

Z_qJX

-65 to 175

^oC/W

Detail Specifications

Breakdown

Voltage

(MIN.)

@ 100µA

(B_V)

Maximum

Average Rectified Current

_______________

Forward

Voltage

Drop

Maximum

Surge

Current Capacitance

Typical

Junction

Reverse

Voltage

Reverse Leakage Current

_______________

(I_R) @ V_R

(I_O)

(V_F) @ I_F= 400mA

(I_FSM

)

@ -12V

(C_O)

(V_R)

25° C

150° C (MIN.)

(MAX.) 25° C

100° C

(NOTE 1)

Type

Volts

Amps

Volts

µA

Amps

1N645,-1

1N646,-1

1N647,-1

1N648,-1

1N649,-1

225

300

400

500

600

275

360

480

600

720

0.4

0.15

1.0

0.2

Note 1: Surge Current @T_A= +25° C to +150° C, for 1 Second

For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

12 3

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与JAN1N645-1X相关器件

型号	品牌	获取价格	描述	数据表
JAN1N645R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.4A, Silicon, GLASS PACKAGE-2
JAN1N645X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.4A, Silicon, GLASS PACKAGE-2
JAN1N6461	MICROSEMI	获取价格	Voidless Hermetically Sealed Unidirectional Voidless Hermetically Sealed Unidirectional
JAN1N6461A	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon
JAN1N6461AUS	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, SURFA
JAN1N6461US	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, SURFA
JAN1N6461USE3	MICROSEMI	获取价格	Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors
JAN1N6462	MICROSEMI	获取价格	暂无描述
JAN1N6463	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon,
JAN1N6463A	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Unidirectional, 1 Element, Silicon

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