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J113_NL PDF预览

J113_NL

更新时间: 2024-02-12 18:38:45
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
13页 483K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92,

J113_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
HTS代码:8541.21.00.95风险等级:5.05
配置:SINGLE最大漏源导通电阻:100 Ω
FET 技术:JUNCTION最大反馈电容 (Crss):5 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

J113_NL 数据手册

 浏览型号J113_NL的Datasheet PDF文件第2页浏览型号J113_NL的Datasheet PDF文件第3页浏览型号J113_NL的Datasheet PDF文件第4页浏览型号J113_NL的Datasheet PDF文件第5页浏览型号J113_NL的Datasheet PDF文件第6页浏览型号J113_NL的Datasheet PDF文件第7页 
MMBFJ111  
MMBFJ112  
MMBFJ113  
J111  
J112  
J113  
G
S
TO-92  
G
S
SOT-23  
Mark: 6P / 6R / 6S  
D
D
NOTE: Source & Drain  
are interchangeable  
N-Channel Switch  
This device is designed for low level analog switching, sample  
and hold circuits and chopper stabilized amplifiers. Sourced  
from Process 51.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
35  
- 35  
V
V
VGS  
Gate-Source Voltage  
5
IGF  
Forward Gate Current  
50  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
J111-113  
*MMBFJ111-113  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
125  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2001 Fairchild Semiconductor Corporation  
J111/112/113/MMBFJ111/112/113, Rev  
A

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