是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.88 | FET 技术: | JUNCTION |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.4 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
J113-18-E3 | VISHAY |
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Transistor | |
J113A | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 8MA I(DSS) | TO-226AA | |
J113AA | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J113AA-STYLE-A | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J113AA-STYLE-B | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J113AA-STYLE-C | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J113AA-STYLE-D | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J113AA-STYLE-E | ALLEGRO |
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暂无描述 | |
J113AA-STYLE-G | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A | |
J113AA-STYLE-H | ALLEGRO |
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Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |