生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.84 | 配置: | SINGLE |
最大漏源导通电阻: | 8 Ω | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 35 pF | JEDEC-95代码: | TO-226AA |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 0.36 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
J107L18-1 | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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J107L18-2 | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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J107L-1TA | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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J107L-1TR1 | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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J107L-2 | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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J107L-2-18 | VISHAY | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226A |
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