Datasheet > J108

J108

更新时间： 2024-02-05 03:24:16

品牌	Logo	应用领域
MICROSS		/
页数	文件大小	规格书
1页	283K
描述
Linear Systems replaces discontinued Siliconix J108

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

J108 技术参数

生命周期：	Obsolete	零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-W3	针数：	3
Reach Compliance Code：	unknown	HTS代码：	8541.21.00.95
风险等级：	5.63	其他特性：	LOW INSERTION LOSS
配置：	SINGLE	最大漏源导通电阻：	8 Ω
FET 技术：	JUNCTION	最大反馈电容 (Crss)：	15 pF
JEDEC-95代码：	TO-226AA	JESD-30 代码：	O-PBCY-W3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	WIRE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

J108 数据手册

J108

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix J108

FEATURES

This n-channel JFET is optimised for low noise high

DIRECT REPLACEMENT FOR SILICONIX J108

LOW ON RESISTANCE

FAST SWITCHING

performance switching. The part is particularly suitable

for use in low noise audio amplifiers. The SOT-23

package is well suited for cost sensitive applications

and mass production.

r_DS(on)≤ 8Ω

t_(on)≤ 4ns

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

Maximum Temperatures

(See Packaging Information).

Storage Temperature

‐55°C to +150°C

J108 Benefits:

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Low On Resistance

Low insertion loss

Low Noise

350mW

J108 Applications:

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain Voltage

50mA

Analog Switches

Commutators

Choppers

V_GDS= ‐25V

V_GSS= ‐25V

Gate to Source Voltage

J108 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

V_GS(F)

I_DSS

I_GSS

I_G

I_D(off)

r_DS(on)

CHARACTERISTIC

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Forward Voltage

Drain to Source Saturation Current (Note 2)

Gate Reverse Current

MIN

‐25

‐3

‐‐

TYP.

‐‐

0.7

‐‐

‐0.01

0.02

‐‐

MAX

‐‐

‐10

‐‐

‐3

‐‐

UNITS

CONDITIONS

I_G= 1µA, V_DS= 0V

V_DS= 5V, I_D= 1µA

I_G= 1mA, V_DS= 0V

V_DS= 15V, V_GS= 0V

V_GS= ‐15V, V_DS= 0V

V_DG= 10V, I_D= 10mA

V_DS= 5V, V_GS= ‐10V

V_GS= 0V, V_DS≤ 0.1V

Gate Operating Current

Drain Cutoff Current

Drain to Source On Resistance

J108 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

g_fs

g_os

r_DS(on)

C_iss

CHARACTERISTIC

MIN

‐‐

TYP.

0.6

‐‐

3.5

MAX

‐‐

UNITS

CONDITIONS

V_DS= 5V, I_D= 10mA , f = 1kHz

Forward Transconductance

Click To Buy

Output Conductance

Drain to Source On Resistance

Input Capacitance

‐‐

V_GS= 0V, I_D= 0A, f = 1kHz

V_DS= 0V, V_GS= 0V, f = 1MHz

V_DS= 0V, V_GS= ‐10V, f = 1MHz

V_DS= 5V, I_D= 10mA , f = 1kHz

nV/√Hz

C_rss

e_n

Reverse Transfer Capacitance

Equivalent Noise Voltage

J108 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

UNITS

CONDITIONS

Turn On Time

V_DD= 1.5V

V_GS(H) = 0V

Turn On Rise Time

Turn Off Time

t_d(off)

t_f

See Switching Circuit

Turn Off Fall Time

Note 1 ‐ Absolute maximum ratings are limiting values above which J108 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%

J108 SWITCHING CIRCUIT PARAMETERS

SWITCHING TEST CIRCUIT

V_GS(L)

R_L

‐12V

150Ω

10mA

Available Packages:

SOT-23 (Top View)

J108 in SOT-23

J108 in bare die.

I_D(on)

Micross Components Europe

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

下载PDF

与J108相关器件

型号	品牌	描述	获取价格	数据表
J108(OPTION5)	TI	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92	获取价格
J108(SOT-23)	MICROSS	Transistor	获取价格
J108(TO-18)	MICROSS	Transistor	获取价格
J108,126	NXP	TRANSISTOR,JFET,N-CHANNEL,25V V(BR)DSS,80MA I(DSS),TO-92	获取价格
J108/D10Z(OPTION18)	TI	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92	获取价格
J108/D10Z(OPTION5)	TI	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

J108

J108 技术参数

J108 数据手册

与J108相关器件

与J108相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

J108

J108 技术参数

J108 数据手册

与J108相关器件

与J108相关文章

您还可以找

您在本页遇到什么问题？