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IXTH1N170DHV PDF预览

IXTH1N170DHV

更新时间: 2024-02-20 10:13:18
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IXYS /
页数 文件大小 规格书
5页 239K
描述
Power Field-Effect Transistor,

IXTH1N170DHV 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Base Number Matches:1

IXTH1N170DHV 数据手册

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IXTA1N170DHV  
IXTH1N170DHV  
Symbol  
Test Conditions  
Characteristic Values  
TO-263HV-2L Outline  
A
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
L1  
c2  
gfs  
VDS = 30V, ID = 0.5A, Note 1  
570  
950  
mS  
D1  
E1  
D
H
3
Ciss  
Coss  
Crss  
3090  
95  
pF  
pF  
pF  
1
A1  
2
L4  
VGS = -10V, VDS = 25V, f = 1MHz  
L
L3  
c
b
b2  
e2  
e1  
30  
PIN: 1 - Gate  
2 - Source  
3 - Drain  
td(on)  
tr  
td(off)  
tf  
46  
38  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 5V, VDS = 850V, ID = 0.5A  
A2  
130  
216  
RG = 10(External)  
Qg(on)  
Qgs  
47  
3.7  
25  
nC  
nC  
nC  
VGS = +5V, VDS = 850V, ID = 0.5A  
Qgd  
RthJC  
RthCS  
0.43C/W  
C/W  
TO-247HV  
0.21  
Safe-Operating-Area Specification  
Characteristic Values  
Min. Typ. Max.  
Symbol  
SOA  
Test Conditions  
VDS = 1700V, ID = 100mA, TC = 75C, Tp = 5s 170  
W
V
TO-247HV Outline  
E
A
E1  
R
0P  
A2  
0P1  
Source-Drain Diode  
Q
S
Symbol  
Test Conditions  
Characteristic Values  
D1  
D2  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
D
4
VSD  
IF = 1A, VGS = -10V, Note 1  
0.75  
1.30  
1
2
3
L1  
L
A3  
2X  
D3  
E2  
E3  
4X  
trr  
IRM  
QRM  
2.8  
45.0  
63.0  
μs  
A
μC  
A1  
IF = 1A, -di/dt = 100A/s  
VR = 100V, VGS = -10V  
e
b
b1  
c
e1  
3X  
3X  
PINS:  
1 - Gate 2 - Source  
3, 4 - Drain  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1  
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1  
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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