IXTA1N170DHV
IXTH1N170DHV
Symbol
Test Conditions
Characteristic Values
TO-263HV-2L Outline
A
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
E
L1
c2
gfs
VDS = 30V, ID = 0.5A, Note 1
570
950
mS
D1
E1
D
H
3
Ciss
Coss
Crss
3090
95
pF
pF
pF
1
A1
2
L4
VGS = -10V, VDS = 25V, f = 1MHz
L
L3
c
b
b2
e2
e1
30
PIN: 1 - Gate
2 - Source
3 - Drain
td(on)
tr
td(off)
tf
46
38
ns
ns
ns
ns
Resistive Switching Times
V
GS = 5V, VDS = 850V, ID = 0.5A
A2
130
216
RG = 10 (External)
Qg(on)
Qgs
47
3.7
25
nC
nC
nC
VGS = +5V, VDS = 850V, ID = 0.5A
Qgd
RthJC
RthCS
0.43C/W
C/W
TO-247HV
0.21
Safe-Operating-Area Specification
Characteristic Values
Min. Typ. Max.
Symbol
SOA
Test Conditions
VDS = 1700V, ID = 100mA, TC = 75C, Tp = 5s 170
W
V
TO-247HV Outline
E
A
E1
R
0P
A2
0P1
Source-Drain Diode
Q
S
Symbol
Test Conditions
Characteristic Values
D1
D2
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
D
4
VSD
IF = 1A, VGS = -10V, Note 1
0.75
1.30
1
2
3
L1
L
A3
2X
D3
E2
E3
4X
trr
IRM
QRM
2.8
45.0
63.0
μs
A
μC
A1
IF = 1A, -di/dt = 100A/s
VR = 100V, VGS = -10V
e
b
b1
c
e1
3X
3X
PINS:
1 - Gate 2 - Source
3, 4 - Drain
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537