Datasheet > IX2127G

IX2127G

更新时间： 2024-11-21 07:08:55

品牌	Logo	应用领域
CLARE		晶体驱动器晶体管开关双极性晶体管
页数	文件大小	规格书
12页	1636K
描述
High-Voltage Power MOSFET & IGBT Driver

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IX2127G 数据手册

IX2127

High-Voltage

Power MOSFET & IGBT Driver

Driver Characteristics

Description

The IX2127 is a high-voltage, high-speed power

MOSFET and IGBT driver. High-voltage level-shift

circuitry enables this device to operate up to 600V.

Clare’s proprietary common-mode design techniques

provide stable operation in high dV/dt noise

environments.

Parameter

V_OFFSET

Rating

Units

600

250/500

250

I_{O +/-}(Source/Sink)

V_CSth

t_ON/ t_OFF(Typical)

100

An on-board comparator can be used to detect an

over-current condition in the driven MOSFET or IGBT

device, and then shut down drive to that device. An

open-drain output, FAULT, indicates that an

over-current shutdown has occurred.

Features

• Floating Channel Designed for Bootstrap Operation

up to 600V

• Tolerant to Negative Transient Voltages; dV/dt

Immune

The gate driver output typically can source 250mA

and sink 500mA, which is suitable for fluorescent lamp

ballast, motor control, SMPS, and other converter

drive topologies.

• Undervoltage Lockout

• 3.3V, 5V, and 12V Input Logic Compatible

• Open-Drain FAULT Indicator Pin Shows

Over-Current Shutdown

• Output in Phase with the Input

The IX2127 is provided in 8-pin DIP and 8-pin SOIC

packages, and is available in Tape & Reel versions.

See ordering information below.

Applications

• High-Speed Gate Driver

• Motor Drive Inverter

Ordering Information

Part

Description

RoHS

2002/95/EC

e₃

IX2127G

8-Pin DIP (50/Tube)

IX2127N

8-Pin SOIC (100/Tube)

8-Pin SOIC (2000/Reel)

IX2127NTR

IX2127 Block Diagram

V_B

V_CC

Low Side High Side

Undervoltage Lockout

Buffer

V_CC

V_S

Low-High

Level Shift

Data Latch

Transmitter

Receiver

Enable

Blanking

Signal

Delay

FAULT

Enable

Data Latch

High-Low

Level Shift

Receiver

Transmitter

COM

Comparator

DS-IX2127 - R02

www.clare.com

12 3 4 5 6 7...12

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