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ISPGAL22V10C-7LK PDF预览

ISPGAL22V10C-7LK

更新时间: 2024-01-20 16:25:32
品牌 Logo 应用领域
其他 - ETC 可编程逻辑器件
页数 文件大小 规格书
14页 221K
描述
Electrically-Erasable PLD

ISPGAL22V10C-7LK 数据手册

 浏览型号ISPGAL22V10C-7LK的Datasheet PDF文件第2页浏览型号ISPGAL22V10C-7LK的Datasheet PDF文件第3页浏览型号ISPGAL22V10C-7LK的Datasheet PDF文件第4页浏览型号ISPGAL22V10C-7LK的Datasheet PDF文件第5页浏览型号ISPGAL22V10C-7LK的Datasheet PDF文件第6页浏览型号ISPGAL22V10C-7LK的Datasheet PDF文件第7页 
ispGAL22V10  
In-System Programmable E2CMOS PLD  
Generic Array Logic™  
Features  
Functional Block Diagram  
• IN-SYSTEM PROGRAMMABLE™ (5-V ONLY)  
— 4-Wire Serial Programming Interface  
RESET  
I/CLK  
— Minimum 10,000 Program/Erase Cycles  
— Built-in Pull-Down on SDI Pin Eliminates Discrete  
Resistor on Board (ispGAL22V10C Only)  
8
OLMC  
I/O/Q  
I
10  
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY  
— 7.5 ns Maximum Propagation Delay  
— Fmax = 111 MHz  
OLMC  
I/O/Q  
I
12  
I
OLMC  
I/O/Q  
— 5 ns Maximum from Clock Input to Data Output  
— UltraMOS® Advanced CMOS Technology  
14  
I
• ACTIVE PULL-UPS ON ALL LOGIC INPUT AND I/O PINS  
OLMC  
I/O/Q  
• COMPATIBLE WITH STANDARD 22V10 DEVICES  
— Fully Function/Fuse-Map/Parametric Compatible  
with Bipolar and CMOS 22V10 Devices  
I
16  
OLMC  
I/O/Q  
I
• E2 CELL TECHNOLOGY  
16  
OLMC  
I/O/Q  
— In-System Programmable Logic  
— 100% Tested/100% Yields  
I
14  
— High Speed Electrical Erasure (<100ms)  
— 20 Year Data Retention  
OLMC  
I/O/Q  
I
12  
• TEN OUTPUT LOGIC MACROCELLS  
— Maximum Flexibility for Complex Logic Designs  
OLMC  
I
I
I
I/O/Q  
I/O/Q  
I/O/Q  
• APPLICATIONS INCLUDE:  
— DMA Control  
— State Machine Control  
— High Speed Graphics Processing  
— Software-Driven Hardware Configuration  
10  
OLMC  
OLMC  
8
SDO  
SDI  
MODE  
SCLK  
PROGRAMMING  
LOGIC  
PRESET  
• ELECTRONIC SIGNATURE FOR IDENTIFICATION  
Description  
Pin Configuration  
The ispGAL22V10, at 7.5ns maximum propagation delay time,  
combines a high performance CMOS process with Electrically Eras-  
able (E2) floating gate technology to provide the industry's first in-  
system programmable 22V10 device. E2 technology offers high  
speed (<100ms) erase times, providing the ability to reprogram or  
reconfigure the device quickly and efficiently.  
PLCC  
SSOP  
4
2
28  
26  
1
7
28  
22  
Vcc  
SCLK  
I
I
I
5
7
2 5 I/O/Q  
I/O/Q  
I/CLK  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
SDO  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I
The generic architecture provides maximum design flexibility by al-  
lowing the Output Logic Macrocell (OLMC) to be configured by the  
user. The ispGAL22V10 is fully function/fuse map/parametric com-  
patible with standard bipolar and CMOS 22V10 devices. The stan-  
dard PLCC package provides the same functional pinout as the  
standard 22V10 PLCC package with No-Connect pins being used  
for the ISP interface signals.  
I
I
I
ispGAL  
22V10  
2 3  
I/O/Q  
ispGAL22V10  
Top View  
I
I
MODE  
SDO  
MODE  
I
Top View  
I
I
I
I/O/Q  
I/O/Q  
9
21  
I
I
I
I
11  
1 9 I/O/Q  
18  
12  
1 4  
1 6  
14  
15  
SDI  
GND  
Unique test circuitry and reprogrammable cells allow completeAC,  
DC, and functional testing during manufacture. As a result, Lat-  
tice Semiconductor delivers 100% field programmability and func-  
tionality of all GAL products. In addition, 10,000 erase/write cycles  
and data retention in excess of 20 years are specified.  
Copyright © 1997 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject  
to change without notice.  
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.  
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com  
July 1997  
1
isp22v10_02  

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