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ISL6605CR-T

更新时间: 2024-01-08 02:18:02
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英特矽尔 - INTERSIL 驱动器
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9页 296K
描述
Synchronous Rectified MOSFET Driver

ISL6605CR-T 数据手册

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ISL6605  
®
Data Sheet  
January 4, 2005  
FN9091.5  
Synchronous Rectified MOSFET Driver  
Features  
• Drives Two N-Channel MOSFETs  
The ISL6605 is a high frequency, MOSFET driver optimized  
to drive two N-Channel power MOSFETs in a synchronous-  
rectified buck converter topology. This driver combined with  
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM  
controller forms a complete single-stage core-voltage  
regulator solution with high efficiency performance at high  
switching frequency for advanced microprocessors.  
• Adaptive Shoot-Through Protection  
• 0.4On-Resistance and 4A Sink Current Capability  
• Supports High Switching Frequency  
- Fast Output Rise and Fall Time  
- Ultra Low Propagation Delay 8ns  
• Three-State PWM Input for Power Stage Shutdown  
• Internal Bootstrap Schottky Diode  
• Low Bias Supply Current (5V, 30µA)  
• Enable Input  
The IC is biased by a single low voltage supply (5V) and  
minimizes low driver switching losses for high MOSFET gate  
capacitance and high switching frequency applications. Each  
driver is capable of driving a 3000pF load with an 8ns  
propagation delay and less than 10ns transition time. This  
product implements bootstrapping on the upper gate with an  
internal bootstrap Schottky diode, reducing implementation  
cost, complexity, and allowing the use of higher  
• QFN Package  
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat  
No Leads-Product Outline.  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile.  
performance, cost effective N-Channel MOSFETs. Adaptive  
shoot-through protection is integrated to prevent both  
MOSFETs from conducting simultaneously.  
• Pb-Free Available (RoHS Compliant)  
Applications  
• Core Voltage Supplies for Intel® and AMD®  
Microprocessors  
The ISL6605 features 4A typical sink current for the lower  
gate driver, which is capable of holding the lower MOSFET  
gate during the Phase node rising edge to prevent shoot-  
through power loss caused by the high dv/dt of the Phase  
node.  
• High Frequency Low Profile DC-DC Converters  
• High Current Low Voltage DC-DC Converters  
• Synchronous Rectification for Isolated Power Supplies  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
The ISL6605 also features a Three-State PWM input that,  
working together with Intersil multi-phase PWM controllers,  
will prevent a negative transient on the output voltage when  
the output is being shut down. This feature eliminates the  
Schottky diode that is usually seen in a microprocessor  
power system for protecting the microprocessor from  
reversed-output-voltage damage.  
Pinouts  
UGATE  
BOOT  
PWM  
1
2
3
4
8
7
6
5
PHASE  
EN  
7
8
TOP VIEW  
8 PIN SOIC  
VCC  
BOOT  
PWM  
EN  
1
2
6
TOP VIEW  
8 PIN SOIC  
GND  
LGATE  
5
VCC  
3
4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2002-2005. All Rights Reserved  
1
Intel® is a registered trademark of Intel Corporation. AMD® is a registered trademark of Advanced Micro Devices, Inc.  
All other trademarks mentioned are the property of their respective owners.  

ISL6605CR-T 替代型号

型号 品牌 替代类型 描述 数据表
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Synchronous Rectified MOSFET Driver

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