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ISL6605CRZA-T

更新时间： 2024-01-07 10:02:21
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动接口集成电路驱动器
页数 文件大小 规格书
10页 559K
描述
4A HALF BRDG BASED MOSFET DRIVER, PQCC8, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220VEEC, QFN-8

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ISL6605CRZA-T 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：QFN
包装说明：HVQCCN, LCC8,.12SQ,25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.6
Is Samacsys：N高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：S-PQCC-N8
JESD-609代码：e3长度：3 mm
湿度敏感等级：1功能数量：1
端子数量：8最高工作温度：70 °C
最低工作温度：标称输出峰值电流：4 A
封装主体材料：PLASTIC/EPOXY封装代码：HVQCCN
封装等效代码：LCC8,.12SQ,25封装形状：SQUARE
封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：5 V认证状态：Not Qualified
座面最大高度：1 mm子类别：MOSFET Drivers
最大供电电压：5.5 V最小供电电压：4.5 V
标称供电电压：5 V表面贴装：YES
温度等级：COMMERCIAL端子面层：MATTE TIN
端子形式：NO LEAD端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：40
宽度：3 mmBase Number Matches：1

ISL6605CRZA-T 数据手册

 浏览型号ISL6605CRZA-T的Datasheet PDF文件第2页浏览型号ISL6605CRZA-T的Datasheet PDF文件第3页浏览型号ISL6605CRZA-T的Datasheet PDF文件第4页浏览型号ISL6605CRZA-T的Datasheet PDF文件第5页浏览型号ISL6605CRZA-T的Datasheet PDF文件第6页浏览型号ISL6605CRZA-T的Datasheet PDF文件第7页 
FOR NEW DES  
IGNS, INTERSIL RE  
COMMENDS  
D PRODUCT - ISL6  
DATASHEET  
DROP-IN ENHANCE  
609  
ISL6605  
Synchronous Rectified MOSFET Driver  
FN9091  
Rev 7.00  
May 9, 2006  
The ISL6605 is a high frequency, MOSFET driver optimized  
to drive two N-Channel power MOSFETs in a synchronous-  
rectified buck converter topology. This driver combined with  
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM  
controller forms a complete single-stage core-voltage  
regulator solution with high efficiency performance at high  
switching frequency for advanced microprocessors.  
Features  
• Drives Two N-Channel MOSFETs  
• Adaptive Shoot-Through Protection  
• 0.4On-Resistance and 4A Sink Current Capability  
• Supports High Switching Frequency  
- Fast Output Rise and Fall Time  
- Ultra Low Propagation Delay 8ns  
The IC is biased by a single low voltage supply (5V) and  
minimizes low driver switching losses for high MOSFET gate  
capacitance and high switching frequency applications.  
Each driver is capable of driving a 3000pF load with an 8ns  
propagation delay and less than 10ns transition time. This  
product implements bootstrapping on the upper gate with an  
internal bootstrap Schottky diode, reducing implementation  
cost, complexity, and allowing the use of higher  
• Three-State PWM Input for Power Stage Shutdown  
• Internal Bootstrap Schottky Diode  
• Low Bias Supply Current (5V, 30µA)  
• Enable Input  
• QFN Package  
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat  
No Leads-Product Outline.  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile.  
performance, cost effective N-Channel MOSFETs. Adaptive  
shoot-through protection is integrated to prevent both  
MOSFETs from conducting simultaneously.  
• Pb-Free Plus Anneal Available (RoHS Compliant)  
Applications  
• Core Voltage Supplies for Intel® and AMD®  
Microprocessors  
The ISL6605 features 4A typical sink current for the lower  
gate driver, which is capable of holding the lower MOSFET  
gate during the Phase node rising edge to prevent shoot-  
through power loss caused by the high dv/dt of the Phase  
node.  
• High Frequency Low Profile DC/DC Converters  
• High Current Low Voltage DC/DC Converters  
• Synchronous Rectification for Isolated Power Supplies  
The ISL6605 also features a Three-State PWM input that,  
working together with Intersil multi-phase PWM controllers,  
will prevent a negative transient on the output voltage when  
the output is being shut down. This feature eliminates the  
Schottky diode that is usually seen in a microprocessor  
power system for protecting the microprocessor from  
reversed-output-voltage damage.  
Related Literature  
• Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Pinouts  
ISL6605  
ISL6605  
(8 LD QFN)  
TOP VIEW  
(8 LD SOIC)  
TOP VIEW  
UGATE  
BOOT  
PWM  
1
2
3
4
8
7
6
5
PHASE  
EN  
8
7
VCC  
BOOT  
PWM  
EN  
1
2
6
GND  
LGATE  
5
VCC  
3
4
FN9091 Rev 7.00  
May 9, 2006  
Page 1 of 10  
1234567...10

中文翻译

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与ISL6605CRZA-T相关器件

型号 品牌 获取价格 描述 数据表
ISL6605CRZ-T RENESAS

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 		Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet
ISL6605IB INTERSIL

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 		Synchronous Rectified MOSFET Driver
ISL6605IB ROCHESTER

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 		4 A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, MS-012AA, SOIC-8
ISL6605IB-T INTERSIL

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 		Synchronous Rectified MOSFET Driver
ISL6605IBZ INTERSIL

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 		Synchronous Rectified MOSFET Driver
ISL6605IBZ ROCHESTER

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 		4 A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8
ISL6605IBZ RENESAS

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 		Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet
ISL6605IBZA INTERSIL

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 		Synchronous Rectified MOSFET Driver
ISL6605IBZ-T RENESAS

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 		Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet
ISL6605IR INTERSIL

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 		Synchronous Rectified MOSFET Driver

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