ISL45042
Electrical Specifications Test Conditions: VDD = 3V, AVDD = 10V, OUT = 5V, R
= 24.9kΩ; Unless Otherwise Specified.
SET
Typicals are at T = +25°C (Continued)
A
TEMP
PARAMETER
Programming Time
SYMBOL
TEST CONDITIONS
(°C)
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
MIN
TYP
MAX
100
7
UNITS
ms
P
T
SET Voltage Resolution
SET Differential Nonlinearity
SET Zero-Scale Error
SET Full-Scale Error
SET Current
SET
SET
(Note 4)
7
7
Bits
LSB
LSB
LSB
μA
VR
DN
Monotonic Over Temperature
-
-
±1
±2
±8
-
SET
-
-
ZSE
FSE
SET
-
-
20
-
ISET
SET
Through R
SET
(Note 7)
-
10
2.25
-
SET External Resistance
To GND, AVDD = 20V
To GND, AVDD = 4.5V
200
45
-
kΩ
ER
-
kΩ
AVDD to SET Voltage Attenuation
OUT Settling Time
AVDD to SET
1:20
20
-
V/V
μs
OUT
to ±0.5 LSB Error Band (Note 5)
-
-
ST
OUT Voltage Range
V
VSET +
0.5V
13
V
OUT
OUT Voltage Drift
NOTES:
OUT
(Note 5)
25 to 55
-
<10
-
mV
VD
2. CTL signal only needs to be greater than 4.9V to program EEPROM.
3. Tested at AVDD = 20V.
4. The Counter value is set to mid-scale ±4 LSB’s in the Production.
5. Simulated and Determined via Design and NOT Directly Tested.
6. Simulated Maximum Current Draw when Programming EEPROM is 23mA, should be considered when designing Power Supply.
7. A Typical Current of 20μA is Calculated using the AVDD = 10V and RSET = 24.9kΩ. The maximum suggested SET Current should be 120μA.
Application Information
AVDD
AVDD
R
The application circuit to adjust the VCOM voltage in an LCD
panel is shown in Figure 1. The ISL45042 has a 128-step
sink current resolution. The output is connected to an
external voltage divider, that results in decreasing the output
VCOM voltage as you increase the ISL45042 sink current.
ISL45042
CTL
I
Sink
1
CE
OUT
SET
R
2
R
SET
CTL Pin
VCOM
The adjustment of the output VCOM voltage and the
programming of the non-volatile memory are provided
through a single pin called CTL, when the CE pin is high.
+
-
The output VCOM voltage is increased with a mid (Vdd/2) to
high transition (0.8*VDD) on CTL pin. The output VCOM
voltage is decreased with a mid (Vdd/2) to low transition
(0.3*VDD), on CTL pin (Reference Figure 6). Once the
minimum or maximum value is reached on the 128 steps,
the device will not overflow or underflow beyond that
minimum or maximum value.
COLUMN
DRIVER
Programming of the non-volatile memory occurs when the
CTL pin exceeds 4.9V. The CTL signal needs to remain
above 4.9V for more than 200µs. The level and timing
needed to program the non-volatile memory is given in
Figure 2. It then takes a maximum of 100ms for the
programming to be completed inside the device.
SINGLE PIXEL
IN LCD PANEL
FIGURE 1. VCOM ADJUSTMENT IN AN LCD PANEL
FN6072.6
November 14, 2006
4